Used AIXTRON AIX G5 HT #9074863 for sale
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ID: 9074863
Vintage: 2011
MOVPE Planetary Reactor
Includes Transfer Module
Application: 14x4" wafer deposition
Planetary Reactor System:
Cabinet with lining
Stainless steel reactor chamber: water-cooled, vertical lid lifting mechanism
High Growth Rate (HGR) injector: water-cooled, SiC coated graphite planetary disk, sandwich design
Max. light-pipe temperature: 1250ºC
SiC coated graphite wafer holder (satellite) with Gas Foil Rotation
(2) In-situ monitoring viewports from top
Ferro-fluidics feedthrough for main rotation with rotation monitoring
Center purge line
Thermostated reactor chamber ceiling
Graphite exhaust collector and outer liner to prevent deposition on chamber wall
Individual Satellite Rotation Drive (EqiSat)
Glove box
Main Gas Blending Unit
RF-Heating Unit
Vacuum Cleaner for glove box
Vacuum System
Large Particle Trap for nitride application
Process pump
Automated satellite transfer system for high temperature operation (600ºC)
Computer Control System
Remote PC
Safety System
Gas Handling System:
(5) MO-G1 Standard Metal-Organic Channel (2xTMGa/H2, 2xTEGa/N2, 1xTMAI/H2)
(2) MO-G1-D Double Standard Metal-Organic Channel (2xCp2Mg/H2, 2xTMIn/N2)
(1) MO-G2-T Triple Standard Gas Channel (3xNH3)
(1) MO-G3_Double Dilution Metal-Organic Channel (N.N./N2)
(1) MO-G4 Double Dilution Gas Channel with additional pusher (1xSiH4/H2)
(1) MO-G5-10M Vacuum Lines
(3) MO-G6 Dummy Line (2xMO, 1xHydride Top run/vent)
(1) N2/H2 Separation of two MO-Stacks
(2) N2/H2 Mixture unit for one Run/Vent Stack (1xMO Run/Vent)
(2) MO-Differential Vent-Run Pressure Balancing (2xMO Run/Vent)
(2) Upgrade Thermo Bath
MO-Standard Gas Channel (5% Cl2/N2 for reactor clean)
EpiCurve TT TWO:
Emissivity corrected pyrometry at 950nm
Individual wafer measurement of surface temperature
High position resolution
Real-time measurement
Temperature accuracy: +/-1K
Growth rate measurement at selectable second wavelength: 950 +405nm for GaN
19" Electronic controller, including light source and detector
User manual and CD software
Purification:
(2) Moisture Sensor (H2, N2):
DP measurement range possible down to -120ºC (1ppb)
Integration of Read-Out Value into control system
Purifier Cl2
Extensions:
Vacuum Tweezer
N2 gun for glove box
Cl2 Scrubber: Cleansorb CS200SE
2011 vintage.
AIXTRON AIX G5 HT is a high-performance, high throughput metal-organic chemical vapour deposition (MOCVD) reactor used for the fabrication of advanced materials and devices such as semiconductors. The reactor employs highly sophisticated processes to ensure the correct exposure of various materials to the plasma and substrate chamber components. Field of Important Applications AIXTRON AIX G 5 HT is capable of producing a wide range of materials in a cost effective manner. It is well known in the industry for its high selectivity across various materials substrates, ranging from silicon to high-performance materials such as gallium arsenide for electronics and optoelectronics applications. Moreover, highly repeatable production processes and process control allow for increased dimensional and structural control and uniformity of the deposited films across large areas. G5 HT Programmable Process Technologies AIX G5 HT offers a suite of process technologies that are key to the success of any material deposition. The programmable deposition sources allow users to work with various reactive species, while the gas feeding systems enable the use of carrier gases for the supply of the reactive species into the reaction chamber. Further, high frequency generator power supplies can generate fully customised pulse waveforms to increase the adhesion and improve the uniformity of the films. Plasma Sources and Substrate Heating The high-performance plasma source and advanced substrate heating technology in AIX G 5 HT allows for precise film production with better control of the chemical, structural and mechanical composition of the films over large areas. The plasma source in the G5 HT is powerful enough to achieve fast and reliable etching and deposition processes, which are key for the production of advanced semiconductor devices. Safety and Regulatory Compliance AIXTRON AIX G5 HT is designed in full compliance with the relevant safety regulations, to ensure safe operation and optimal safety for the operating personnel. Moreover, the reactor is over-pressured and under-pressured to enable rapid evacuation of hazardous materials and vapours. Finally, AIXTRON AIX G 5 HT is designed for energy efficiency and it can operate in semi-sealed mode to ensure long process times.
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