Used AIXTRON Crius 30 X 2" #9032566 for sale
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ID: 9032566
Vintage: 2007
CCS/IC MOCVD GaN system
Electrical cabinet
Gas mixing cabinet
Reactor cabinet
Glove box cabinet
Heater power supply unit
Heat exchanger
Vacuum system
Temperature range: Storage: 10º-50º C; During condition: 15º-25º C
Relative humidity: Storage: 30-80%; 45-80%
Voltage: 400 V +/- 5% (3/N/PE); 208 V +/- 5% (3/N/PE)
Frequency: 50 Hz +/- 1% for 400 V; 60 Hz +/- 1% 208 V
Power consumption: Approx. 28 kVA for system; approx. 110 kVA for power supply, cabinet
Max power consumption: 110 kVA
Gas mixing cabinet/electrical cabinet: 2 ventilation ducts, ∅250mm
=> 750 m3/h each
Process gases:
Type of gas: e.g. NH3, HCl
Purity: ≥ 5.0 N (free of condensate)
Inlet pressure range: 3, 3.5 bar
Pneumatic supply:
Quality: Clean, dry 5 um filtered
Pressure: 5,7 bar
Temperature: Approx. 20º C
Cooling water:
Inlet temperature: 17-25º C
Temperature stability: +/- 1º C
Inlet pressure (max): 6.5 bar
Outlet pressure (max): 2.5 bar
Pressure difference inlet/out: > 4 bar
Minimum total flow: 50 l/min
RF generator board is nonfunctional
2007 vintage.
AIXTRON Crius 30 X 2 is a two-platen, plasma-enhanced chemical vapor deposition (PECVD) reactor. It is used for the deposition of high quality thin films, such as oxides and nitrides, onto a variety of substrates including silicon, metals, dielectrics, and polymers. Its two platen design enables larger diameter and area substrates to be processed compared to single-platen PECVD systems. The Crius 30 X 2 has a 30 cm process chamber, which is designed for uniform, controlled deposition of thin films by using plasma-enhanced CVD along with computer-controlled process variables such as pressure, substrate temperature, and gas flows. It also has adjustable work chamber homogeneity zones, allowing users to distribute their process conditions over specific areas of the substrate. The PECVD process is powered by a patented 1.8 kW radio frequency (RF) power generator that operates at 13.56 MHz. It is designed to provide tunable RF power for both platen electrodes and substrate bias. The system allows up to 100 Watts of RF power per platen. The machine includes an advanced software and control system that provides easy user interface, enhanced process control, and automated quality monitoring. The deposition rates on the Crius 30 X 2 are adjustable between 0.1 and 10 microns/minute. Deposition rates depend on the type of substrate and the gases used. The maximum temperature is limited to 350°C, but can be lower for certain substrates. Additionally, the PECVD process can be used to deposit multicomponent, multilayer thin films with excellent reproducibility. The Crius 30 X 2 is also highly reliable, as it is designed with structural parts that are connected by precise alignment pins to ensure superior bed flatness and repeatability. Its modular design makes maintenance and service relatively easy, and it is suitable for industrial production lines. In conclusion, AIXTRON Crius 30 X 2 is an advanced PECVD system for the deposition of quality thin films that is designed with reliability and accuracy in mind. Its two platen design enables larger and more precise substrate processing than single-platen systems, and its adjustable work chamber homogeneity zones allow for more accurate process control. Its advanced RF power generator and software make it suitable for both industrial production lines and laboratory research.
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