Used AIXTRON Crius 31x2 #293587445 for sale

AIXTRON Crius 31x2 is a multi-wafer MOVPE metal organic vapour phase epitaxy reactor for the growth of advanced III-V compound semiconductors. The system features a double-wafer susceptor design, allowing for high process repeatability and uniformity. AIXTRON CRIUS 31 X 2 is designed to accommodate up to three different molecular sources and two separate heater sets, both of which are optimized separately to ensure maximal yield and uniformity of crystal growth. The reactor is also equipped with a gas mixing station, allowing for precise control of process parameters and often simplifying process setup and adaptation to different material systems. Crius 31x2 can be operated in both atmospheric and low-pressure growth processes, offering flexibility in the type of deposition that can be achieved. The temperature range that can be used spans from ambient to 1000 degrees Celsius and a maximum growth rate of 30 micrometers per hour can be attained. CRIUS 31 X 2 is a highly versatile MOVPE reactor that enables the production of high-quality III-V compound semiconductor devices. The use of a double-wafer susceptor design minimizes dopant diffusion and allows for reproducibility in high-volume scenarios. Thanks to the added flexibility provided by the gas mixing station, complex material systems can be produced with ease, thus granting AIXTRON Crius 31x2 an important role in the production of today's leading-edge III-V compound semiconductor structures.