Used AIXTRON Crius 31x2 #293587447 for sale

AIXTRON Crius 31x2 is a high-performance metalorganic vapor phase epitaxy (MOVPE) reactor used for growing high quality epitaxial layers of inorganic materials. It is equipped with a 2-inch MnPIII platform, designed for improved layer uniformity over large areas. The system is ideal for the production of devices requiring precise thickness control of semiconductor layers over large areas such as light emitting diodes (LEDs) and other electronics devices. The efficient productivity and repeatability of AIXTRON CRIUS 31 X 2 benefit from a suite of comprehensive features. This includes a grid-like manifold technology for precise gas delivery, which allows for precise gas control for precise layer thickness and uniformity over a larger area. Additionally, two linear DC sources, a medium frequency high power source, and a high magnetic coil, provide precise control and reproducibility of the growth conditions. The reactor can be operated in a safe and stable manner with a wide range of temperatures and pressures. The homogenous reactor chamber is designed to ensure good homogeneity control during deposition on large substrates with precise temperature control over the whole wafer via in-situ thermal mapping. Furthermore, the direct substrate heating system ensures uniform temperature of the whole substrate area. Crius 31x2 is designed with an advanced, user-friendly graphical user interface (GUI) to enable cumbersome, manual tasks to be automated. It also allows users to monitor and manually adjust the machine state during growth process in order to obtain optimal results. The user-friendly GUI optimizes process recipes and data collection for rapid experimentation and process tuning. CRIUS 31 X 2 is designed to be one of the most reliable and efficient systems available for sensitive device fabrication, delivering ultimate process control and reproducible quality results. It is an ideal system for industrial and research applications, as it provides stabilized, high-performance deposition of epitaxial layers for diverse devices over large areas.