Used AIXTRON Crius 31x2 #293587450 for sale

AIXTRON Crius 31x2 is a plasma-enhanced chemical vapor deposition (PECVD) equipment developed for growth of thin-film materials for the semiconductor industry. The system incorporates a 31 cm x 2 cm process chamber with a cutting-edge technology for film growth, including a newly designed RF/DC magnetron source, two quartz quartz showerheads, two process gas inlets, two process pressure control valves, a software-driven plasma control unit and a process gas analyzer. The PECVD machine is designed to provide accurate control and regulation of deposition parameters such as temperature, process gas concentrations, showerhead power and chemical composition of the deposition zone. It is also capable of selecting pro-filtering species in order to improve process efficiency. The RF/DC magnetron source is an advanced design, which combines the features of a conventional RF source with a direct current source and provides an improved ability to control ionization of the reactant gases. The tool utilizes both a quartz showerhead and a quartz crucible for the film formation process. These components maintain the homogeneity of the film by allowing a uniform combination of deposition parameters in the plasma zone. It also has two process gas inlets and two process pressure control valves to allow precise control of the gas flow. Additionally, the asset includes a software-driven plasma control model that includes control systems for both process gas and temperature control. The thermally processed process chamber features an advanced design that is optimized to minimize particle contamination and provide an environment suitable for the formation of high-quality films. The combination of process parameters, an automated monitoring equipment, the RF/DC magnetron source and a quartz crucible ensures that the system can provide optimal process control and an extremely uniform film growth zone. The unit also provides extensive safety features, including an automated chamber purging machine, a sulfur dioxide control tool to limit gas contamination and a ground fault interrupter asset to protect against electrical hazards. Additionally, the model is equipped with a process gas analyzer to monitor the composition of the deposition zone and ensure a homogenous environment for film growth. AIXTRON CRIUS 31 X 2 equipment provides a reliable and accurate platform for PECVD growth of different kinds of thin-film materials, perfect for a variety of manufacturing needs. With its highly efficient design, it offers unmatched performance for the production of high-quality semiconductor materials and assures the highest standards of quality and reliability for the semiconductor device fabrication industry.