Used AIXTRON Crius 31x2" #293587451 for sale
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AIXTRON Crius 31x2 is a next generation reactor designed for growing thin films and nanostructures in the semiconductor industry. The Crius 31x2 utilizes MOCVD (Metal-Organic Chemical Vapor Deposition) to deposit layers of materials specifically designed for semiconductor applications. This reactor operates at a wavelength of 312nm and a substrate temperature up to 1000°C. The multiple sources of Ge, Si compounds, and P compounds are vaporized in a central reaction chamber and can be independently controlled. This allows materials layers to be manipuated in height, density, and thickness based on user specifications. The Crius 31x2 reactor also features a programmable quartz cells modular heating equipment which allows the substrate materials to be heated to the specified temperature more efficiently. This system helps to reduce reaction chamber heating time, resulting in shorter processing cycles and improved process yields. Additionally, the cooling unit and temperature controlled fans help to keep the temperature of the reaction chamber consistent, minimizing variations in the deposition process. The Crius 31x2 is equipped with a advanced RF power supply and feedback machine to optimize the plasma uniformity and deposition rate. The low pressure MOCVD tool features storage and supply of the reactants and can be programmed for continuous flow or for volumes up to 38.4 ml/min. A modern Windows-based software is included with the reactor, allowing for monitoring, data logging and real-time control of multiple process parameters. The Crius 31x2 reactor has a maximum load of 31 1-inch substrates and an enlargement chamber to accommodate larger substrates. This reactor has a power consumption of 3kW, dimensions of 500mm H x 610mm W x 1800mm L, and a weight of 350 kg. The Crius 31x2 is a reliable, efficient, and cost-effective choice for growing semiconductor thin films and nanostructures.
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