Used AIXTRON Crius 31x2" #9186422 for sale

AIXTRON Crius 31x2 is an epitaxial deposition equipment designed for growth of up to 31x2 (62) 2-inch wafers, and can be used for either metal organic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD). The system is equipped with two independently-controlled reactors, allowing for the growing of two different materials simultaneously. AIXTRON Crius 31x2 features a chamber volume of 1.1 m3, with a vacuum pump down to 0.0025 mbar at a temperature range of 5-450 °C and a maximum pressure as low as 1 mbar. It also includes an advanced wafer handling unit, with both wafer-to-wafer and intra-reactor transfer, accommodating both handling and contamination requirements during batch transfers. The wafer handling machine is compatible with a variety of wafer sizes, as well as small pieces of wafers down to 100 µm. AIXTRON Crius 31x2 tool is designed for process flexibility, with independent control of pressure, temperature, time, and reactant gas and vapor supply for either reactor. Pressure is held to 0.1 mbar accuracy, with a pressure range of 0.1 to 100 mbar, and gas flows are controlled to 0.001 sccm accuracy. AIXTRON Crius 31x2 is also equipped with an advanced robotic arm for sample handling. The arm can move wafers between the reactors, and can also be used for wafer loading and unloading from the substrate elbows, or loading and unloading from cassettes or boatloaders. The robotic arm can move substrates to the inlet manifold or chuck transfer points, and can also provide multiple wafer transfer flexibility within the reactor. Exhaust valves are provided for each reactor, allowing users to utilize different exhaust asset requirements. AIXTRON Crius 31x2 is an incredibly versatile model, capable of providing the highest quality epitaxial layers for a variety of application profiles. The independent control of pressure, temperature, time, and reactant gas and vapor supply for either reactor, combined with the advanced robotic arm and wafer handling equipment, make this epitaxy deposition system the ideal choice for advanced device production.