Used AIXTRON Crius 31x2" #9248204 for sale

AIXTRON Crius 31x2"
Manufacturer
AIXTRON
Model
Crius 31x2"
ID: 9248204
Vintage: 2008
MOCVD System CCS IC Reactor for deposition substrates CSS-Chamber With flip-top lid SiC Coated graphite susceptor (3) Zones tungsten heater Temperature: 1200°C Optical access: (6) Optical ports Outer liner Heat exchanger Pyrometer: Temperature calibration Power supply unit EBARA A70W Dry vacuum pump Dual input plenum shower head injector With cross-flow water cooling Glove box: With inert gas flow (3) Gloves on each side Pressure control: Over pressure protection Monitoring systems interface Maintenance load lock Gas purification Circulation and regeneration unit Sensors: Integrated H2 / O2 / Moisture / Temperature Moisture level: 1 ppm Oxygen level: 1 ppm Vacuum wand Vacuum system: (2) Pressure sensors Throttle valve Vacuum valves Check valves Filter station Gas blending unit: Ventilated gas cabinet with active door locks Gas blending and injection lines Metal sealed digital mass flow controllers Input lines: Particle filters Hydride input lines: Manual valves Hydrogen and nitrogen carrier gas manifold Run / vent stack (Hydrides and (2) MOs) Purge channels Vacuum cleaner With closed loop circulation and separate blower unit Particle trap and double fine filter Dynamic reactor height adjustment In-recipe control of reactor height Computer control system CONTROL LOGIX Programmable Logic Controller (PLC) Recipe execution Recipe manager Macro definition Display and print out of data Remote PC: Desktop PC TFT Monitor, 9" Mouse Keyboard Safety system: Hardwired safety system Hydrogen detection MO-G1 Standard metal organic channel: (2) Cp2Mg/H2 TMAl/H2 N.N./H2 N.N./N2 TEGa/N2 Digital mass flow controller for carrier gas Digital mass flow controller for pusher line Pneumatic 4-way valve Thermostated bath LAUDA RM6 air-cooled with precise temperature control Digital pressure controller for MO-cylinder Pneumatic 5-way vent / Run valve PLC Hardware and system MO-G1-D Double standard metal organic channel: (2) TMIn (2) Metal organic sources sharing thermobath (2) Digital mass flow controllers for carrier gases (2) Digital mass flow controllers for pusher line (2) Pneumatic 4-way valves Thermostated bath LAUDA RM6 air-cooled with precise temperature control (2) Digital pressure controllers for MO-cylinder (one for each cylinder) (2) AIXTRON Pneumatic 5-way vent / Run valves PLC Hardware and safety system MO-G2-D Double standard gas channel: (2) NH3 Manual valve (2) Digital mass flow controllers for hydride gases (2) Digital mass flow controllers for pusher line (2) Pneumatic 3-way valve (2) Pneumatic 5-way vent / Run valves PLC Hardware and safety system MO-G1 Plus MO-G3 sharing one bath: (2) TMGa (2) Digital mass flow controller for carrier gases (2) Digital mass flow controller for pusher line Digital mass flow controller for dopant injection (2) Pneumatic 4-way valve Thermostated bath lauda RM6 air-cooled with precise temperature control (2) Digital pressure controller Pneumatic 5-way vent / Run manifold valve PLC Hardware and safety system MO-G5-10M Vacuum lines MO-G6 Dummy line: Used for balancing gas flow switching Digital mass flow controller Pneumatic 5-way vent / Run valve PLC Hardware and safety system N2/H2 Separation of MO stack: (4) Pneumatic valves and safety system (2) N2/H2 Mixture units for one run / Vent stack Digital mass flow controller with valve and safety system (2) MO-Differential run / Vent pressure balancing Differential pressure sensor X-More MFC and needle valve PID Controller PLC Hardware and safety system Process control: Laser interferometer In-situ monitoring Includes: Susceptor top plate: SiC Coated QUARTZ Susceptor support Liner Thermocouple assembly type C Optical probe Probe adapter O-Ring Engineers kit (2) Valves (N2 H2) Line heating Susceptor: 2" x 31" x 2" CT1000 Particole trap Purification: AERONEX CE-2500KF Purifier For NH3 purification Manual by-pass shut off valve (2) Manual isolation valves (2) AERONEX CE-2500KF Purifiers For N2 and H2 (2) Moisture sensors (H2 N2) MICHELL PURA Hygrometer DP Measurement: -120°C 2008 vintage.
AIXTRON Crius 31x2 is a next-generation silicon carbide epitaxial reactor designed for research and development-focused applications. It is a modular and highly configurable equipment that offers process flexibility from low temperature epitaxy to high temperature growth, at rates of up to 500mm2 per hour. With the capability to grow both n-type and p-type layers on a wide range of substrates, including silicon, sapphire, silicon-on-insulator, diamond and SiC, this is an ideal high-throughput tool for the development of next-generation power electronics and optoelectronic components. AIXTRON Crius 31x2 utilizes a molecular beam epitaxy (MBE) technology and features a programmable mass flow controller which allows for precise gas delivery rate and composition. The system is equipped with four electron beam guns and eleven substrate holder positions for high-throughput film growth. It also includes an integrated vacuum pumping unit with in-situ and ex-situ turbo pumps for fast, low pressure operations, plus an adjustable temperature platform for precise temperature control. The machine's control software features allow for user-friendly recipe scripting and full process parameter optimization. Process optimizations include automated substrate temperature ramping, combination of different gas flux rates, and growth rate adaptation. In addition, AIXTRON Crius 31x2 features a remote access option for remote access monitoring and control. AIXTRON Crius 31x2 stands out in the area of silicon carbide growth with its advanced capabilities and reliable tool performance. With its modular design, the reactor is highly efficient and can be adapted to any specific research needs. This tool is ideal for the advancement and testing of semiconductor devices and components. AIXTRON Crius 31x2 has already proven itself as a powerful tool for researchers in power electronics and optoelectronics, and is an ideal choice for researchers looking for a reliable and versatile epitaxial reactor.
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