Used AIXTRON Crius 31x2" #9248204 for sale
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ID: 9248204
Vintage: 2008
MOCVD System
CCS IC Reactor for deposition substrates
CSS-Chamber
With flip-top lid
SiC Coated graphite susceptor
(3) Zones tungsten heater
Temperature: 1200°C
Optical access: (6) Optical ports
Outer liner
Heat exchanger
Pyrometer: Temperature calibration
Power supply unit
EBARA A70W Dry vacuum pump
Dual input plenum shower head injector
With cross-flow water cooling
Glove box:
With inert gas flow
(3) Gloves on each side
Pressure control: Over pressure protection
Monitoring systems interface
Maintenance load lock
Gas purification
Circulation and regeneration unit
Sensors: Integrated H2 / O2 / Moisture / Temperature
Moisture level: 1 ppm
Oxygen level: 1 ppm
Vacuum wand
Vacuum system:
(2) Pressure sensors
Throttle valve
Vacuum valves
Check valves
Filter station
Gas blending unit:
Ventilated gas cabinet with active door locks
Gas blending and injection lines
Metal sealed digital mass flow controllers
Input lines: Particle filters
Hydride input lines: Manual valves
Hydrogen and nitrogen carrier gas manifold
Run / vent stack (Hydrides and (2) MOs)
Purge channels
Vacuum cleaner
With closed loop circulation and separate blower unit
Particle trap and double fine filter
Dynamic reactor height adjustment
In-recipe control of reactor height
Computer control system
CONTROL LOGIX Programmable Logic Controller (PLC)
Recipe execution
Recipe manager
Macro definition
Display and print out of data
Remote PC:
Desktop PC
TFT Monitor, 9"
Mouse
Keyboard
Safety system:
Hardwired safety system
Hydrogen detection
MO-G1 Standard metal organic channel:
(2) Cp2Mg/H2
TMAl/H2
N.N./H2
N.N./N2
TEGa/N2
Digital mass flow controller for carrier gas
Digital mass flow controller for pusher line
Pneumatic 4-way valve
Thermostated bath LAUDA RM6 air-cooled with precise temperature control
Digital pressure controller for MO-cylinder
Pneumatic 5-way vent / Run valve
PLC Hardware and system
MO-G1-D Double standard metal organic channel: (2) TMIn
(2) Metal organic sources sharing thermobath
(2) Digital mass flow controllers for carrier gases
(2) Digital mass flow controllers for pusher line
(2) Pneumatic 4-way valves
Thermostated bath LAUDA RM6 air-cooled with precise temperature control
(2) Digital pressure controllers for MO-cylinder (one for each cylinder)
(2) AIXTRON Pneumatic 5-way vent / Run valves
PLC Hardware and safety system
MO-G2-D Double standard gas channel: (2) NH3
Manual valve
(2) Digital mass flow controllers for hydride gases
(2) Digital mass flow controllers for pusher line
(2) Pneumatic 3-way valve
(2) Pneumatic 5-way vent / Run valves
PLC Hardware and safety system
MO-G1 Plus MO-G3 sharing one bath: (2) TMGa
(2) Digital mass flow controller for carrier gases
(2) Digital mass flow controller for pusher line
Digital mass flow controller for dopant injection
(2) Pneumatic 4-way valve
Thermostated bath lauda RM6 air-cooled with precise temperature control
(2) Digital pressure controller
Pneumatic 5-way vent / Run manifold valve
PLC Hardware and safety system
MO-G5-10M Vacuum lines
MO-G6 Dummy line:
Used for balancing gas flow switching
Digital mass flow controller
Pneumatic 5-way vent / Run valve
PLC Hardware and safety system
N2/H2 Separation of MO stack:
(4) Pneumatic valves and safety system
(2) N2/H2 Mixture units for one run / Vent stack
Digital mass flow controller with valve and safety system
(2) MO-Differential run / Vent pressure balancing
Differential pressure sensor
X-More MFC and needle valve
PID Controller
PLC Hardware and safety system
Process control:
Laser interferometer
In-situ monitoring
Includes:
Susceptor top plate: SiC Coated
QUARTZ Susceptor support
Liner
Thermocouple assembly type C
Optical probe
Probe adapter
O-Ring
Engineers kit
(2) Valves (N2 H2)
Line heating
Susceptor: 2" x 31" x 2"
CT1000 Particole trap
Purification:
AERONEX CE-2500KF Purifier
For NH3 purification
Manual by-pass shut off valve
(2) Manual isolation valves
(2) AERONEX CE-2500KF Purifiers
For N2 and H2
(2) Moisture sensors (H2 N2)
MICHELL PURA Hygrometer
DP Measurement: -120°C
2008 vintage.
AIXTRON Crius 31x2 is a next-generation silicon carbide epitaxial reactor designed for research and development-focused applications. It is a modular and highly configurable equipment that offers process flexibility from low temperature epitaxy to high temperature growth, at rates of up to 500mm2 per hour. With the capability to grow both n-type and p-type layers on a wide range of substrates, including silicon, sapphire, silicon-on-insulator, diamond and SiC, this is an ideal high-throughput tool for the development of next-generation power electronics and optoelectronic components. AIXTRON Crius 31x2 utilizes a molecular beam epitaxy (MBE) technology and features a programmable mass flow controller which allows for precise gas delivery rate and composition. The system is equipped with four electron beam guns and eleven substrate holder positions for high-throughput film growth. It also includes an integrated vacuum pumping unit with in-situ and ex-situ turbo pumps for fast, low pressure operations, plus an adjustable temperature platform for precise temperature control. The machine's control software features allow for user-friendly recipe scripting and full process parameter optimization. Process optimizations include automated substrate temperature ramping, combination of different gas flux rates, and growth rate adaptation. In addition, AIXTRON Crius 31x2 features a remote access option for remote access monitoring and control. AIXTRON Crius 31x2 stands out in the area of silicon carbide growth with its advanced capabilities and reliable tool performance. With its modular design, the reactor is highly efficient and can be adapted to any specific research needs. This tool is ideal for the advancement and testing of semiconductor devices and components. AIXTRON Crius 31x2 has already proven itself as a powerful tool for researchers in power electronics and optoelectronics, and is an ideal choice for researchers looking for a reliable and versatile epitaxial reactor.
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