Used AIXTRON Crius 31x2" #9283178 for sale

It looks like this item has already been sold. Check similar products below or contact us and our experienced team will find it for you.

AIXTRON Crius 31x2"
Sold
Manufacturer
AIXTRON
Model
Crius 31x2"
ID: 9283178
Vintage: 2010
MOCVD Systems Organometallic chemical vapor deposition system 2010 vintage.
AIXTRON Crius 31x2 reactor is a sophisticated and highly efficient tool used for the production of thin-film materials. It utilizes electron cyclotron resonance (ECR) plasma technology to create a powerful source of ionizing electrons that can be used to react atoms and molecules in the thin-film environment. This technology allows the rapid production and deposition of high-quality thin films in an environmentally friendly process. The AIXTRONCrius 31x2 reactor is composed of three main parts: (1) the ECR plasma source, (2) the reactor chamber and (3) the substrate holder. The ECR plasma source consists of a series of magnetically insulated, permanent-magnet electrodes that are powered by radio-frequency (RF) sources to generate a high-energy plasma environment within the reactor. The plasma source is designed to maintain a constant uniform power density distribution across the reactor chamber, allowing for maximum efficiency in thin-film deposition. The reactor chamber itself is composed of a series of joined - and highly conductive - copper coils, ensuring uniform temperature across the internal walls of the chamber. A vacuum system attached to the chamber allows for the introduction of gases necessary for thin-film deposition and the conditioning of the chamber walls for optimal thin-film growth. The substrate holder is designed specifically to hold a variety of thin-film substrates like glass, quartz, and silicon. The substrates are then threaded through the magnetic coils and exposed to the intense plasma environment. AIXTRON Crius 31x2 reactor is programmed for several different deposition processes, depending on the material and material composition needed. This reactor utilizes a low-pressure sputtering technique to deposit metal, semiconductor, or insulating thin-film substrates. This is done by introducing an inert gas into the chamber and allowing it to react with a target material to generate charged particles that deposit on the thin-film material. This process is highly efficient and produces superior film quality and uniformity across its wide range of applications. AIXTRON Crius 31x2 reactor is also capable of carrying out other more complex processes like reactive ion beam etching, which can improve the surface quality of the target material and increase its adhesion. Additionally, AIXTRON Crius 31x2 reactor utilizes a series of feedback sensors to ensure optimal conditions for fast and reliable thin-film deposition. This makes AIXTRON Crius 31x2 reactor the ideal tool for facilities in need of efficient thin-film production for many different applications.
There are no reviews yet