Used AIXTRON Crius 31x2" #9390892 for sale

AIXTRON Crius 31x2 is a state-of-the-art molecular beam epitaxy (MBE) reactor designed for advanced semiconductor research. Featuring a three-chamber design, reactive gas source, high-performance RF/DC power supply, and in situ diagnostic systems, it provides superior process control and epilayer quality. The Crius 31x2 has three chambers: a growth chamber, a load-lock chamber, and an etching chamber. The growth chamber, which houses the substrate and RF source, has 3000 cubic centimeters of maximum chamber volume, allowing for greater material deposition. The load-lock chamber is used for sample loading and making samples available for process chamber. The etching chamber is used for etch-rates of samples and further sample cleaning. The integrated reactive-gas source of the Crius 31x2 provides highly reactive gases precisely for limit source removal and material growth. The built-in high-performance RF/DC power supply with adjustable output up to 500 watts provides process uniformity and high epi-layer quality. The in situ diagnostic systems, such as ellipsometer, STEM, LEED and RHEED allow for on-line monitoring of substrate, epi-layers and sample characterization, greatly improving process control. The Crius 31x2 is capable of producing epi-layers with various principle layers from III-V, IV/II-VI to wide bandgap materials in monocrystalline form. It operates under ultra high-vacuum conditions for pristine material growth. It is also equipped with various technologies, such as Zn seeding, annealing and interdiffusion, to further boost epi-layer quality. The Crius 31x2 is a cutting-edge MBE reactor designed with superior process control and epi-layer quality in mind. It is capable of producing a wide variety of epi-layers from III-V, IV/II-VI and wide bandgap materials with superior uniformity, quality and reproducibility. It is a valuable tool for advanced semiconductor research in various industries, such as consumer electronics, automotive, and telecommunications.