Used AIXTRON Crius I #192608 for sale

Manufacturer
AIXTRON
Model
Crius I
ID: 192608
Reactor, 31x2 GaN Configured for 31x2, can be upgraded for 37x2, 8x4 or other configurations System has EpiCurve and Twin TT installed (2) RM 25S and (4) RM 6S thermal baths Source Configuration: TMGa-1, TMAl-1, Cp2Mg-1, Cp2Mg-2, Cp2Mg-3, TMIn-1, TMIn-2, TMGa-2, and 4 spare source lines Currently installed 2008 vintage.
AIXTRON Crius I is a multi-purpose epitaxial reactor for the deposition of compound semiconductor films. It is a 300mm horizontal cold-wall CVD tool, equipped with multiple process techniques such as LPCVD, PECVD, EPI, and MBE. Crius I chambers are designed for a wide range of temperatures, allowing high-temperature (HT) deposition of up to 1000°C as well as low-temperature (LT) deposition of down to 100°C. AIXTRON Crius I's advanced process control features enable precision dopant control, tight temperature control, precise power control, and tailored gas flow rates. Crius I offers robust optical monitoring features, with real-time film thickness and emissivity measurements which enables the user to monitor each process layer and make sure all films meet highest quality standards. AIXTRON Crius I is a highly automated platform, enabling users to configure and save chamber settings, as well as recipe profiles. The Crius also has additional features such as closed-loop feedback control, fail-safe mechanisms to prevent plasma arcs, and a video equipment which allows the user to monitor the processes in real-time. Crius I offers outstanding uniformity across multiple wafers, with a maximum non-uniformity across the substrate of less than 1%. AIXTRON Crius I also has multiple options for wafer handling and cassettes, with multiple wafer load ports for single wafer and cassette exchange possibilities. The Crius is capable of deposition on single or multiple substrates in batch runs. Crius I features a dynamic wafer cooling system, with either single or multiple cooling zones allowing for superior growth rate control and peak efficiency. AIXTRON Crius I also has an integrated loader and unloader for maximum flexibility and productivity. In conclusion, Crius I is a 300mm multi-purpose reactor capable of HT and LT deposition. It is a robust and well-engineered platform that ensures precision in dopant control and temperature stability, enabling the user to produce high-quality compound semiconductor films. AIXTRON Crius I's advanced optical monitoring features, dynamic cooling unit, and integrated loader/unloader machine make it a great choice for advanced compound semiconductor deposition processes.
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