Used AIXTRON Crius I #9065474 for sale
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ID: 9065474
Vintage: 2008
31x2" GaN System
(1) EpiTT
Mikron M680
Thermal baths: (2) RM 25S and (6) RM 6S
Source Configuration
TMGa-1
TMGa-2
TMAl-1
Cp2Mg-1
Cp2Mg-2
TMIn-1
TMIn-2
TEGa-1
CBr4-1
DTBSi source lines
2008 vintage.
AIXTRON Crius I is an advanced, high efficiency, horizontally-configured, metal-organic chemical vapor deposition (MOCVD) reactor for producing large area, compound semiconductor material layers for use in optoelectronic, micro-electronic, and power electronics applications. Crius I features a robust processing technology that is based on the use of heated precursors to produce high quality layers from a variety of compounds. The highly efficient precursor delivery and delivery uniformity, combined with the process control, enables superior layer quality and repeatability. AIXTRON Crius I incorporates a laser ablation process for cleaning pre-coated target materials and a rotary vane valve for substrate transport, ensuring environment-free transfer within the reactor. With high temperature operation up to 1000 °C, Crius I is capable of producing layers with advanced material properties and device characteristics. AIXTRON Crius I utilizes a high-precision chuck for substrate support that ensures uniform and consistent wafer adhesion during the deposition process, enabling higher deposition rates and improved layer properties than with other deposition methods. Its closed-loop gas flow, closed-loop pressure and temperature control, and computerized deposition control system enable repeatable, efficient process repeatability and robust wafer/substrate performance. It is also equipped with an advanced precursor delivery system which utilizes thermal waves to accurately release and deposit precursors for exceptionally high material uniformity throughout the deposition process. Crius I is an ideal tool for fast and precise fabrication of a wide range of 2D and 3D semiconductor structures and devices. Its sophisticated process monitoring and control systems facilitates the development of new materials and device structures with superior properties for a wide range of electronics and optoelectronics, providing a complete solution for the manufacture of next-generation semiconductor materials and devices.
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