Used AIXTRON Crius I #9351635 for sale

AIXTRON Crius I is a plasmatron-type thermal chemical vapor deposition (CVD) reactor designed for superior layer deposition performance and industrial grade control. It is suitable for a wide range of applications and materials and is suitable for high aspect ratio structures. Crius I is designed to deposit layers on wafers from 1 to 8 inch in diameter. AIXTRON Crius I uses RF plasma to excite the source material into ionic and radical states in order to create a uniform coating at a low temperature. The source material is introduced as a vaporized gas through an effusion source into the chamber. The gas is then excited by an RF plasma provided by the reactor's power supply. The RF plasma dissociates the gas into ionic and radical species which merge with the source material to form the desired layer on the wafer. This creates uniform layers with excellent step coverage and pinhole-free deposit. Crius I is equipped with a wide range of features and capabilities including an automatic wafer loader, ion beam cleaning, temperature control and monitoring, scroll pumps, RF power control, and multi-zone modules. This enables layer deposition with various source materials and to multiple substrates without the need for additional equipment. AIXTRON Crius I is an advanced thermal CVD reactor designed for industrial-grade and process development applications. It is ideal for layer deposition with high aspect ratio structures, high throughput, and repeatable process parameters from batch to batch. The wide range of material sources allowed by Crius I ensures improved reliability and material properties compared to traditional PECVD or LPCVD processes.