Used AIXTRON Crius II-XL GaN 19x4" #9358604 for sale

AIXTRON Crius II-XL GaN 19x4 is a revolutionary reactor technology specifically designed to facilitate high-efficiency growth of GaN-on-silicon structures. This reactor exemplifies the newest advancements in the current generation of AIXTRON Crius system. It is housed in a 19 x 4 inch panel with a 15kW lamp. It offers a high-pressure data system and using Xenon microwave inductively coupled plasma, it is able to generate up to 4200W of power. This high-power Crius II-XL also allows for an effective gap geometry of 1-5mm with a maximum of 200mmx200mm size for the wafer. The reactor is equipped with a high-tech electronically controlled susceptor made of Platinum(Pt) to ensure a homogeneous and uniform temperature distribution over the entire surface of the susceptor. The susceptor is designed to support up to six growth wafers at a time and fits onto the highly accurate AIXTRON Crius temperature control module. This ensures precise temperature regulation of the susceptor from 50 to 600 °C with minimim temperature deviations of up to ± 1°C. The reactor also includes a state-of-the-art RF generator with a standard operating frequency of 13.56MHz and a pulse operation mode with 0.2 to 1Hz pulse rate and 5 to 60% pulse width. The 13.56 MHz frequency of this RF generator is derived from the 200V source to generate an overall power output of more than 100W. This ensures optimal operating conditions for maximum quality deposition. AIXTRON Crius II-XL GaN 19x4 is an efficient, reliable reactor that ensures maximum operating efficiency while utilizing a vast array of available process parameter options. With its multifunction capability, this reactor is a great solution for applications requiring high-performance processes such as for GaN-on-silicon wafer growth. As such, this technology offers considerable advantages in terms of cost, efficiency, and dependability.