Used AIXTRON Crius II #293659969 for sale

AIXTRON Crius II is a horizontal, single-wafer batch process reactor with a maximum deposition area of up to 300mm. Designed for high-volume manufacturing, it offers high throughput, uniformity, and utilization of reactive materials. Crius II uses up to three gas sources and, depending on the applications, two sources of energetic particles (electrons or ions) for the growth of III-V materials. The equipment is designed for process stability, with an integrated volatile gas distribution control, automated gas analysis, and optical pyrometer for in situ temperature control. It has a sealed chamber for reactive gas supply, with a standard inductively coupled plasma (ICP) source for plasma control. AIXTRON Crius II utilizes the Plasma Vapor Deposition (PVD) process, with an optional hybrid PECVD process for a broader range of applications. The system features a flow control unit for the delivery of reactive gases as well as vacuum control in the process chamber. This offers greater precision and control of reactant and impurity levels, as well as better temperature uniformity. A predictive model offers recipe control in all stages of the process. An integrated measured gas analysis machine allows for proactive control of process parameters at every step. The reactor can handle up to three sources of energetic particles (electrons or ions) and offers the opportunity to exploit their synergies for different applications. The tool is equipped with advanced safety features, including integrated gas and vacuum leak detection and a triple layer safety interlock. Crius II is designed for industrialization and offers large batch sizes, fast process stability, and uniformity. It is suited for production of high quality, low cost semiconductor and photonic products. With its high efficiency, optimized process control, and automation, AIXTRON Crius II is an excellent choice for production of optoelectronic and nanophotonic devices.