Used AIXTRON Crius II #293660321 for sale

Manufacturer
AIXTRON
Model
Crius II
ID: 293660321
Wafer Size: 2"-6"
Vintage: 2011
System, 2"-6" AFFINITY EWE-08CH-ED44CBD0 EDWARDS IXH645H Missing parts: MKS Pressure THERMO LAUDA RM6S bath THERMO LAUDA RM25S bath LAUDA WKL 230/E Chiller HORIBA MFC 100 SLM 2011 vintage.
AIXTRON Crius II is a bench-top, non-molecular beam epitaxy (MBE) reactor that is designed for deposition of thin films of group-III nitrides. It is capable of producing high-quality thin films of these materials for heterojunction applications, such as blue-light-emitting diodes (LEDs) and laser diodes (LDs). Crius II supports both metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). The furnace part of the reactor is capable of providing temperatures up to 1250°C. The design of the reactor ensures homogeneous conditions throughout the epitaxial growth chamber. AIXTRON Crius II is fitted with a number of features to support ease of use and stable deposition. It is equipped with multiple heating technologies (induction, direct, and RTA) and cooling systems to maintain temperature uniformity. There is a gas delivery equipment to supply C2H4, NH3, and Ar with flow rates up to 80 sccm. There is also a graphite filament which supports thermal evaporation of any material, as well as another crucible for the thermal evaporation of InGaAs if desired. Crius II has a load-lock vacuum system which can evacuation the growth chamber from the load-lock chamber to low pressure. The load-lock chamber also features an abrasion-resistant window to protect the load-lock chamber from the high temperatures of the growth chamber. The reactor also features a turbomolecular pump to support high-vacuum operation of up to 10-8 torr. The reactor's automated software can support up to 20 individually programmable deposition parameters at a single time. This makes AIXTRON Crius II a highly versatile and reliable unit for MBE and MOCVD deposition. Furthermore, the in situ He pressure and thermal profilometry machine measures the quality of the deposited layers. In conclusion, Crius II is an advanced, bench-top, MBE/MOCVD reactor that is capable of providing uniform conditions for the growth of thin films of group-III nitrides in a wide range of applications. The reactor is equipped with several features that make it easier to use and improve the quality of deposition, such as the automated software, the multiple heating sources, and the tight vacuum control. This makes it an ideal device for depositing high-quality thin films useful in blue LEDs and laser diodes.
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