Used AIXTRON Crius II #9135739 for sale

Manufacturer
AIXTRON
Model
Crius II
ID: 9135739
Vintage: 2010
CCS/IC MOCVD system, 2010 vintage.
AIXTRON Crius II is a superior chemical vapor deposition (CVD) reactor designed to produce high-quality layers of thin films for use in semiconductor materials. This reactor is equipped with an advanced equipment of advanced process control (APC) technology, which uses an adaptive algorithm to minimize deposition rate fluctuations for uniform cooling. It also has a fast and effective system for controlling film temperature. Crius II includes two vertical wafer holders for loading and unloading wafer substrates. The main chamber is made of stainless steel and operates from an inert gas environment for optimum uniform deposition. It also has an active gas flow rate control unit, enabling precise measurement of reactive gas mixtures and precise control of gas flow conditions necessary for optimum atomic layer deposition. AIXTRON Crius II also has a pulsed electron beam source machine, which is used to create localized heating at various points on the wafer, allowing it to precisely and uniformly deposit films. Additionally, it has an in-situ monitor that allows the user to measure physical properties such as stress and electrical properties in real time. To further ensure high production yields, Crius II can be equipped with additional tool capabilities, including auto-focus alignment and a single-crystal furnace. It also has an on-board annular jet feature that helps improve cooling rates and reduce film movement between layers. AIXTRON Crius II is designed to meet the highest standards of accuracy and efficiency in thin film production. Its advanced CVD process control asset provides superior results with minimal temperature and rate fluctuations. In addition, its efficient inert gas environment provides a clean and uniform deposition environment. With additional features such as auto-focusing alignment and annular jet, Crius II can achieve the highest quality thin films with minimal film movement. Overall, this efficient reactor is ideal for thin film deposition in the demanding semiconductor industry.
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