Used AIXTRON Crius II #9160107 for sale

AIXTRON Crius II is an industrial-grade deposition equipment designed to meet the needs of demanding deposition processes such as MBE growth or advanced CVD processes involving complex materialstacks for compound semiconductor development. This reactor excels in epitaxial layer growths on III-N materials, such as GaN and GaAs, and the increased temperature range of up to 1000°C makes the system well-suited for the growth of AlGaN, GaN, and SiC. The dual chamber unit of Crius II offers flexibility and control over an unprecedented range of processes. The machine is equipped with two separately configured deposition chambers: the lower chamber for substrate handling, loading, cooling, venting, and pumping; and the upper chamber for material processing, featuring a variety of different source options and an improved high-temperature range of up to 1000°C. Substrates can be transferred directly from the lower chamber to the upper chamber via a platform that holds up to three substrates and is operated using an intuitive touchscreen. AIXTRON Crius II utilizes AIXTRON proprietary C-Mode technology to offer superior performance with uniform layer growths over different substrates, even high aspect-ratio substrates. The C-Mode provides precise and constant process conditions, autocalibrates, and maintains a stable overlap ratio between the epitaxial crystals. This ensures layer uniformity over the entire sample and with reduced rejects due to overlayer variations. The pressure control is also improved in the upper chamber, allowing for improved control and uniformity over the entire deposition process. Feedstock sources can be loaded from the tool's Tool Chamber onto the Civia strip-fed boat, with multiple boats available to cover the full range of source materials. The three available sources types are shuttered −ave, processRF, and carrierRF. The shuttered−ave source has been engineered to maintain a precise gap between the substrate and source faces to ensure uniform layer growths. ProcessRF and CarrierRF sources maximize source-substrate distance during the process for the highest level of particle suppression. Crius II is designed to ensure easy maintenance and operation, with efficient workflow that helps ensure consistency and cost efficiency during the production process. With a wide range of features and reliable performance, AIXTRON Crius II is an ideal solution for industrial deposition processes of advanced compound semiconductor materials. Through the combination of AIXTRON advanced C-Mode technology and its enhanced temperature range, Crius II helps establish the high-quality standard needed to meet the demands of modern day fabrication.