Used AIXTRON Crius II #9375371 for sale

AIXTRON Crius II is an MOCVD deposition equipment for research applications. It is a three-zone, horizontal tube reactor with a central tube where researchers can grow epitaxial films in a wide range of materials. Crius II is designed to enable high-quality epitaxial growth and deposition of thin films on substrates or wafers for the development of advanced device structures. The outer two zones of the reactor are based on a coldwall design, providing uniform temperature conditions for controlling the growth rate and quality of the material being deposited. The central zone contains the actual reactor chamber, where the reactor source plates are connected to vertically mounted wafers or substrates. The reactor can be outfitted with up to 4 reactors for top, middle and bottom based metalorganic chemical vapor deposition. The reactor is equipped with an advanced motion control and control system for precise positioning of both the reactor sources and the wafers or substrates. AIXTRON Crius II is also equipped with a temperature control unit that ensures precise temperatures in all three zones for stable material growth and deposition. Crius II is capable of processing a wide range of materials, including semiconductors, dielectrics, and metals, and is particularly well-suited for deposition of III-V and IV-VI compound semiconductors such as GaAs, InP, or GaN. The machine is capable of producing high-quality epitaxial films with excellent crystalline characteristics and tight control over dopants. These features make AIXTRON Crius II ideal for research and development of advanced device applications. Crius II is designed for easy maintenance and operation, and is ideal for scientists and engineers looking for a reliable and flexible MOCVD deposition tool for research purposes. The asset is backed by AIXTRON promise of superior service and support, making AIXTRON Crius II a wise choice for many research applications.