Used AIXTRON Crius-R #293667918 for sale

AIXTRON Crius-R
Manufacturer
AIXTRON
Model
Crius-R
ID: 293667918
MOCVD System.
AIXTRON Crius-R is an advanced epitaxial reactor designed by the German equipment manufacturing company AIXTRON. This state-of-the-art epitaxial reactor is ideal for applications requiring highly precise layer thicknesses and quality control for advanced III-V and Indium Phosphide semiconductor wafers. Crius-R reactor has been developed as an advanced, cost-effective tool to enable a wide range of growth processes, such as multi-step layer growth and customizable recipes. AIXTRON Crius-R reactor features AIXTRON proven Metal Organic Chemical Vapor Deposition (MOCVD) technology, which provides uniform deposition over a large area with exceptional layer thickness precision and quality. With the use of ultra-short pulse lasers ablation technology, Crius-R reactor compensates for the non-uniform distribution of metals over large substrate areas, providing precise control of the course of the growth process. In addition to its remarkable layer growth capabilities, AIXTRON Crius-R reactor also provides superior quality control, ensuring high yield production. Its advanced diagnostics include an advanced pressure monitor, which monitors the pressure of the ambient atmosphere, without the need for human intervention. The thermal imaging system also provides feedback regarding the growth conditions as seen in real-time. Together, these features ensure the highest quality possible for the applications. Crius-R reactor features a wide range of process recipes to suit varied applications and can be adapted to fit a wide range of customer requirements, be it for production or research and development. It is also easy to use and maintain, and offers superior automation features, such as barcode scanning of test wafers, automatic rotation of substrates and monitored deposition of the required layers. Overall, AIXTRON Crius-R is a cost-effective, advanced epitaxial reactor that offers superior control and precision of layer growth processes. It has a wide range of features and benefits that make it an ideal choice for a variety of applications within the semiconductor industry.
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