Used AIXTRON Crius #9302163 for sale

AIXTRON Crius
Manufacturer
AIXTRON
Model
Crius
ID: 9302163
MOCVD System With 6x2" dish GaN.
AIXTRON Crius is a plasma Enhanced Chemical Vapor Deposition (PECVD) reactor used in the production of semiconductors. It is well known for its large processing chamber size, allowing for large substrates to be processed at once. This helps reduce production times, ultimately increasing the efficiency and throughput of products. The reactor is built with a multi chamber architecture, allowing for several different substrates to be processed simultaneously with different parameters. The chamber size is large enough to fit multiple 200mm or 150mm substrates, along with several other smaller substrates. Crius is outfitted with state of the art RF source technology which is used to create the reaction-enabling plasma. The RF source is backed by a 14-capacity, dual frequency power supply which has a 10 KW total output. AIXTRON Crius also has a number of configurations for process gas delivery, including dual manifold gas injectors and an ambient gas supply to the deposition zone. Additionally, the reactor has an advanced feedback control system to ensure a consistent output and optimized operational parameters. Crius also offers excellent temperature uniformity, mechanical stability, and vacuum system capabilities. It is capable of maintaining temperatures within 40°C of the set value across all process chambers, under any circumstances. Additionally, the reactor is equipped with active chamber height adjustment to account for different substrate sizes, so that process uniformity remains consistent. AIXTRON Crius also has an oil-free liquid nitrogen pump which gives it a vacuum of up to 5 x 10⁻⁸ mbar. Overall, Crius is a reliable semiconductor manufacturing tool which offers versatile processing capabilities, advanced feedback control systems, excellent temperature uniformity and mechanical stability, and a vacuum system capable of reaching 5 x 10⁻⁸ mbar. Its large processing chamber size allows for large substrates to be processed at once and ensures that throughput is increased.
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