Used AIXTRON G3 2600 #9150530 for sale

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Manufacturer
AIXTRON
Model
G3 2600
ID: 9150530
Wafer Size: 4"
Vintage: 2007
MOCVD Systems, 4" LED for GaN Heating type: RF Induction heater Epi-tune: In-situ reflectance spectra Software OS: Window Gas system: Gas type: VCR Type MFC: Bronhost / N2 / H2 / HCL / SiH4 / NH3 Carrier gas: H2 (Total flow : 70 l/min) N2 (Total flow : 70 l/min) MO-Source: TMGa, TEGa, Cp2Mg, TMIn, TMAl, UDMH, CBr4, DTBSI Vacuum system: Process pump: EBARA ESA25D Dry pump Filter: Exhaust gas filter with chiller Pressure control: MKS651 Controller Throttle V/V Utility: Voltage: System: 208V AC, 3 Phase Heater: 380V AC, 3 Phase Cooling system: Cooling liquid: Water Max.inlet pressure: <6 bar Differential pressure: >4 bar Inlet temperature: <25℃ Outlet temperature: <65℃ Included: GMS Cabinet Reactor cabinet Exhaust and chamber Scrubber RF Generator Particle filter Pump Power: System: 25KVA Heater: 144KVA 208 V, 3 Ph, 50/60 Hz Currently de-installed and warehoused 2007 vintage.
AIXTRON G3 2600 is a reactor that is specifically designed for the fabrication of advanced materials. It is one of the most powerful reactors currently on the market, offering a combination of high power, versatility, and precision performance. G3 2600 has a 300-mm process chamber with the ability to provide a controllable and uniform temperature to generate an optimum process result. It is capable of processing a wide range of materials such as silicon, Indium, Aluminum-Gallium-Arsenide (AlGaAs), Silicon-Germanium (SiGe) and gallium nitride (GaN). It also has the ability to evaporate materials for oxidation and deposition, while providing a dynamic range of process parameters optimized for the application. AIXTRON G3 2600 is equipped with a range of advanced features which makes it ideal for a variety of applications. Its innovative design allows for superior conformal film uniformity and uniform doping of homogenous thin films, while its low thermal budget gas source enables oxide deposition at high levels of planarity compared to traditional deposition techniques. Additionally, its adjustable thermal budget also enables wide range of film stress for both single- and multi-layer structures. G3 2600 reactor also offers enhanced automation and process monitoring via an advanced batch control software with process inversion. This software facilitates pre-programmed process protocols and enables the operator to optimize their system parameters quickly and easily. In addition, AIXTRON G3 2600 is designed to meet all environmental regulations and incident prevention regulations, while the automatic interlocks of the process chamber will immediately stop the process in case of any potential danger. Furthermore, features such as RF gasketing and ferrite mixing also help reduce/ eliminate film contamination, and its sealed geometry ensures a hermetic processing environment. With its extensive range of features, G3 2600 is an ideal reactor for a wide range of research and industrial applications. It offers precise control for production of advanced materials and is reliable, efficient and versatile, making it a great choice for any advanced material application.
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