Used AIXTRON G3 2600 #9214303 for sale
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ID: 9214303
Wafer Size: 4"
Vintage: 2007
MOCVD Systems, 4"
LED for GaN
Wafer size : 4" x 8", 2" x 24"
Heating type: RF Induction heater
Epi-tune: In-situ reflectance spectra
MO Source: TMGa, TEGa, Cp2Mg, TMIn, TMAl
Operating system: Windows
Gas system:
Gas line: VCR Type
MFC: Bronhost, N2 / H2 / HCL / SiH4 / NH3
Carrier gas: H2 Flow 70L/min; N2 flow 70L/min
Vacuum system:
Process pump: EBARA ESA25D
Filter: Exhaust gas filter with separate water cooling unit
Pressure control: MKS651 Controller, throttle valve
Cooling system:
Cooling liquid: Water
Maximum inlet pressure: < 6 Bar
Differential pressure: > 4 Bar
Inlet temperature: < 25º C
Outlet temperature: < 65º C
Includes:
GMS Cabinet
Reactor cabinet
Exhaust and chamber
Scrubber
RF Generator
Particle filter
Pump
Power supply: 208 V, 50/60 Hz, 3 Phase
2007 vintage.
AIXTRON G3 2600 is a next-generation semiconductor-manufacturing reactor that enables the industry to produce high-performance commercial semiconductor devices. AIXTRON G3 is a plasma-enhanced chemical vapor deposition (PECVD) reactor, which is a form of deposition technology used to deposit thin-film materials such as oxide, nitride, and polysilicon onto a substrate in high-temperature environments. This reactor is specifically designed to meet the high-end semiconductor growth requirements of modern semiconductor manufacturing processes. G3 2600 utilizes advanced features such as multiple RF (radiofrequency) channels, one-Click Model Control (OMC), and a high-efficiency dual-plasma source to maximize uniformity and process control. The multiple RF channels allow control of different reactor parameters, including pressure, temperature, and radical density, enabling precise monitoring of the reactor environment. OMC simplifies the process setup and reduces risk, while the high-efficiency dual-plasma source ensures uniformity across multiple wafer substrates. AIXTRON G3 2600 also features an 11-zone FP-Al2O3 equipment, which reduces the risk of particles generated during the deposition process. This FP-Al2O3 system contains a custom-designed ceramic liner that reduces particle levels, while also providing improved heat dissipation. Additionally, the advanced temperature control unit allows for precise monitoring of the reactant temperature, with an accuracy of up to 0.1 °C. In addition to its advantages in process control and uniformity, G3 2600 also offers a number of other features. These include a built-in degassing machine which removes unwanted air, oxygen, and volatile organic compounds (VOCs) from the reactor environment to improve purity and high-production-rate capabilities. AIXTRON G3 2600 is a rugged and reliable reactor tool that offers excellent step coverage and uniformity while meeting the high-end semiconductor growth requirements of modern semiconductor manufacturing processes. With its advanced features, precise process control, and high production rate, G3 2600 is an ideal choice for semiconductor device production.
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