Used AIXTRON G3 #293602405 for sale

AIXTRON G3 is a high-volume deposition tool used in semiconductor device fabrication. This tool utilizes a rich set of features that allows for achieving very high-quality results. It is the first all-in-one tool combining electrostatic and chemical vapor deposition (CVD), according to the reactor class. Thanks to its ability to do both metal and dielectric deposition, the tool can be used to construct metal and dielectric layers for different device structures. It is a three-chamber, low thermal stability reactor. Its chambers are designed for independent high heat deposition applications, incorporating a gas showerhead offering low thermal impact. This precludes the need for a separate chamber dedicated to thermal prevention. AIXTRON G 3 boasts a highly efficient multi-zone temperature control system and a high-precision process control. This allows for excellent uniformity and repeatability of substrate temperature. The reactor uses three separate deposition sources in the form of effusion cells (MOCVD/MOTE) dedicated to metal deposition, and two dedicated liquid or gas sources for dielectric deposition. These sources are enclosed in a vacuum-tight chamber, and provide exact control of deposition rates via precise timing of power and gas supply. G3 features a fast-response reaction chamber in which the temperatures can be adjusted in a matter of seconds. This feature helps to speed up processing time, while still maintaining excellent uniformity. Additionally, the frequencies of the radio-frequency sources can be adjusted in order to further optimize the process. G 3 allows for up to three film layers to be deposited with single setup, in both single- and multi-wafer processing. This provides a higher throughput than with many other deposition tools. The tool's robust architecture also allows for a wide range of process temperatures as well as RF bias control. Overall, AIXTRON G3 is a versatile and high performance deposition tool for achieving excellent quality results in semiconductor device fabrication. Its multi-dimensional control capabilities, fast deposition rates, and ability to deposit different layers in one setup make it a great choice for a wide range of applications.