Used AIXTRON G3 #9040737 for sale
It looks like this item has already been sold. Check similar products below or contact us and our experienced team will find it for you.
Tap to zoom
Sold
ID: 9040737
MOCVD Systems, 24x2"
No. of wafers per carrier: 24x2"
Process: GaN
Gas Configuration: NH3, H2, N2, SiH4, TMGa, TMAl, CP2Mg, TEGa, TMIn
No purifiers
Packaged and placed in a warehouse.
AIXTRON G3 is a reactive-ion etching (RIE) reactor designed by AIXTRON for specialized, high-precision etching needs in a wide range of industries. It is fully capable of handling both dry and wet etch processes and is compatible with various gases used in a variety of chemical and physical etching processes. AIXTRON G 3 features a large 20" x 20" chamber with an up to 12" height clearance and is designed to produce etch profiles featuring high aspect ratios and high feature resolution. It includes a standard quartz bell-jar which is designed with advanced etch geometry and highly optimized process parameters. G3 utilizes ICP source technology to generate advanced discharge and plasma etch throughputs. This technology is combined with a variable DC power supply to produce higher etch rates and better uniformity. The chamber also features an adjustable reverse bias to improve etch selectivity and insulation for perfectly etched structures with a minimal surface damage. G 3 features a full set of process monitoring and control elements including pressure control, temperature sensors, automated purge cycle control, and etch time control. The on-board controller is designed with integrated hardware and software controls, as well as a vacuum feedthrough for easy connections to external systems. The system also has an auto-intensification to enable the etch rate to stay optimized during long etch cycles. AIXTRON G3 is designed to be an all-in-one etching solution that can be used in a number of R&D, production, and industrial settings. This system is designed to be easy to use and extremely reliable, and has been proven to etch a wide range of materials including polysilicon, silicon oxide, metal, and other common materials. In addition, the system has been designed to safely and effectively etch these materials with high-speed and excellent throughput even in processes that require high aspect ratio, high-aspect resolution, or low etch rates.
There are no reviews yet