Used AIXTRON G3 #9066893 for sale
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ID: 9066893
Wafer Size: 4"
MOCVD Systems, 4"
LED for GaN
Wafer Size : 4" x 8 , 2" x 24
Epi-tune: In-situ reflectance spectra
Gas: N2 / H2 / HCL / SiH4 / NH3
Source: TMGa, TEGa, Cp2Mg, TMIn, TMAl
Gas System:
Gas line: VCR type
MFC: Bronhost
Carrier gas: H2 flow 70L/min; N2 flow 70L/min
Vacuum System:
Process pump: Ebara ESA25D
Filter: exhaust gas filter with separate water cooling unit
Pressure control: MKS651 controller, throttle valve
Includes:
GMS Cabinet
Reactor cabinet
Exhaust and chamber
Scrubber
RF Generator
Particle filter
Pump
Software OS; Window
Voltage: 208 V AC, 3-Ph
Power: System: 25 kVA, Heater: 144 kVA
Frequency: 50/60 Hz
Cooling system:
Cooling liquid: Water
Max. inlet pressure: < 6 bar
Differential pressure: > 4 bar
Inlet temperature: < 25º C
Outlet temperature: < 65º C
2005-2007 vintages.
AIXTRON G3 is a chemical vapor deposition reactor designed to grow advanced functional materials. AIXTRON G 3 process chamber is suitable for growth of wide range of materials including high mobility metals, dielectrics, and semiconductors, and features a number of advanced technologies, notably, high process flexibility, a full range of gas control, and a highly intuitive user interface. AIXTRON G3process chamber is capable of accommodating up to four wafers in linear configuration, with a total capacity of up to 8 wafers (6-inch or 4-inch) with a single substrate holder. G3's flexibility enables growth of a variety of materials from aluminum to silicon on a wide range of wafer types. The wafer temperature range is from room temperature to 500 degrees Celsius for growth of III-V, transition-metal-oxides, and metals. G 3 features a passive-ion-pump pump-down system with a triple wall construction, which eliminates contamination from outside sources. It also offers multi-zone temperature control and temperature monitored gas flow, allowing independent process control and independent temperature control of evaporated materials. All the process parameters are adjustable allowing the user to control growth conditions precisely. AIXTRON G3 includes an advanced user-friendly software package that provides well organized, simple to understand, graphical user interfaces (GUI). This helps the user to control the process conveniently without worrying about complex processes or programing. The software package also integrates all safety codes to ensure safe operation of the process and maximum protection of the substrate. AIXTRON G 3 is a good choice for growing a variety of materials on a wide range of wafer types with a high level of precision. It could be used as an effective tool for research and industrial applications. This cutting-edge technology offers a unique opportunity to create advanced materials and offer a step forward in the development of high-performance products for a variety of applications.
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