Used AIXTRON G3 #9074580 for sale
It looks like this item has already been sold. Check similar products below or contact us and our experienced team will find it for you.
Tap to zoom
Sold
ID: 9074580
GaN systems
Dopants: Cp2Mg, SiH4
Transfer: load lock only
Wafer loading capabilities: (24) 2” or (8) 4”
CACE software
EpiTune (in-situ monitoring)
Facility requirements:
Gas specification:
N2 – 4VCRF – 4.0 ~ 7.0 bar
H2 – 4VCRF – 4.0 ~ 7.0 bar
NH3 – 4VCRF – 3.0 ~ 3.5 bar
SiH4/H2(200ppm) – 4VCRF – 3.0 ~ 3.5 bar
HCL – 4VCRF – 3.0 ~ 3.5 bar
GN2(N2 tech) – 4VCRF – 7.0 ~ 8.5 bar
Wafer specification:
System:
Inlet – 6.5 bar (maximum) 1" Swagelok bulkhead
Minimum total flow 63 l/m
Temp - 17°C ~ 25°C stability ± 1°C
Outlet – 2.5 bar (maximum) 1” Swagelok bulkhead pump loop
Minimum differential pressure 4 bar for required flow
Inlet – 6 bar(Maximum) 3/4” Swagelok bulkhead
Minimum total flow 50 l/m
Temp - 20°C stability ± 1°C
Outlet – 2 bar (maximum) 3/4” Swagelok bulkhead reactor loop
Minimum differential pressure 4 bar for required flow
Maximum temp – 40°C
RF generator:
Inlet – 6 bar (maximum) 3/4” Swagelok bulkhead
Minimum total flow 36 l/m
Outlet – 2 bar (maximum) 3/4” Swagelok bulkhead reactor loop
Minimum differential pressure 4 bar for required flow
Electrical requirements:
Voltage: System: 208 V, RF generator: 380 V
Current: System: 80A (customer 100A), RF generator 250A (customer 315A)
Frequency: 60 Hz
Wiring requirement: System: 3/N/PE, RF generator: 3/PE
Main power location: E-rack
UPS input location: internal to E-rack, provided as spare
Exhaust specifications:
Total cabinet exhaust requirement: GMS (750m3/h) (2ea) Reactor (500m3/h) (2ea)
TGA exhaust requirement:
- Process gas exhaust connected to scrubber DN40KF flange,
50~100mm below top of glovebox open line for continuous flow
HE-leak tight ≤ 10E-9 mbar l/s
Oxygen < 1ppm
Line pressure atm > p > atm – 20mbar
- Exhaust GB pump, 3/8” Swagelok
- Exhaust Forming gas, 3/8” Swagelok.
AIXTRON G3 is an advanced metal-organic chemical vapor deposition (MOCVD) reactor used for semiconductor applications such as the production of light-emitting diode (LED) chips. AIXTRON G 3 is a robust platform with a long lifetime that is due in part to its proprietary SplitFlow design. SplitFlow is a patented, dual-flow delivery system that helps overcome limits on performance, like temperature and deposition homogeneity, while using fewer sources and allowing for lower operating costs. With SplitFlow, gases are separated and injected into multiple locations, creating a shorter flow path to the substrate and reducing chemical contact time. This can help increase process reproducibility and efficiency. G3 reactor is also capable of high chamber pressures of up to 500 millibar, enabling rapid film formation and thicker deposition without compromising uniformity. To ensure uniformity, G 3 features DualPlay, which combines gas delivery and temperature control management via two independently programmable temperature controllers and two shutters. This helps create a consistent environment throughout the reactor, which is necessary for growing crystals and thin-film layers. AIXTRON G3 features three individually-grown, ultra-stable linear motor stages for precise substrate manipulation. The stages offer low thermal drift for high positional accuracy, and a minimum pitch of 0.5 microns. AIXTRON G 3 also features the Advanced Process Control Suite, a suite of intelligent algorithms to optimize the performance of deposition recipes. G3 reactor is a reliable semiconductor reactor designed for high precision, accuracy, and repeatability. Its SplitFlow design allows for thinner films, improved level of uniformity, and higher efficiency thanks to shorter flow paths and lower operating costs. Its high chamber pressure enables thick film formation and temperature control is managed via DualPlay, ensuring uniform conditions for growing crystals and thin-film layers. The three linear stages provide high positional accuracy, and the Advanced Process Control suite helps to fine tune the entire process.
There are no reviews yet