Used AIXTRON G3 #9163470 for sale

AIXTRON G3 is an innovative laser-driven, horizontal-type, low-pressure Cold Wall Chemical Vapour Deposition (CVD) reactor designed for the production of semiconductor materials. The reactor is the first in the world to combine precise control of growth rate, temperature, oxygen concentration, and deposition uniformity thanks to the powerful AIXTRON laser equipment. AIXTRON G 3 is capable of processing a variety of materials, including Si, SiGe, InP, III-V nitrides, and oxides at temperatures ranging from room temperature up to 930°C. It's also suitable for small-area epitaxy, making it ideal for production of high-performance integrated photonic components. The reactor consists of a stainless steel vacuum chamber with a built-in two-zone process flange, an AIXTRON laser system, a chiller, a quartz window, and a control unit. Inside the process chamber are two compartments: a "cold wall" and a "hot zone". The cold wall controls the substrate temperature, while the hot zone is used for deposition. AIXTRON laser unit is the key component powering G3. It uses two specialized laser beams to precisely control the gas flow and generate the desired power level for deposition. The control unit allows for flexibility when setting growth rates, temperature, oxygen concentration, and deposition uniformity. In addition, the chiller ensures substrate temperature is maintained within the required range. G 3 is a versatile and powerful-yet-easy-to-use machine that delivers always high-quality materials. It offers reproducible process conditions and reliable particle-free growth with very low defect density. This advanced CVD reactor is suitable for research and industrial applications in areas such as optoelectronic and MEMS devices. It's currently pushing the boundaries in fields such as integrated photonics, where it's expected to have a huge impact.