Used AIXTRON G4 #293652203 for sale

AIXTRON G4
Manufacturer
AIXTRON
Model
G4
ID: 293652203
MOCVD Systems.
AIXTRON G4 is a gas-filled, linear, continuous-wave, inductively coupled Reactive Ion Etch (RIE) reactor used for etching and deposition processes in the nanotechnology and semiconductor manufacturing industries. It is a source for unprecedented levels of performance, reliability and process control. AIXTRON G 4 has a robust and reliable chamber design featuring an innovative gas management system to improve gas-flow uniformity, ensure minimum impact on the substrate, and reduce chamber maintenance. The chamber is equipped with advanced, fully automated process recipes for an extremely wide deposition range and uniformity. It also offers a wide range of process capabilities such as reactive ion etch (RIE), atomic layer deposition (ALD), electron beam evaporation and sputter deposition. G4 is capable of producing high-quality, extremely tight-tolerance features in under 1 micron. The low-pressure capability enables faster etching, while the chamber pressure can be pre-set to achieve optimal etch rates. Its uniform cooling ensures that the heater temperature is even and stable. The power supplies are modular, allowing for easier maintenance and upgrade of the etching and deposition capabilities. The faster ramp-up rate of the power supplies allows for better control and precision of the etching and deposition processes. Additionally, G 4 is equipped with an optical emission system that provides accurate measurement of the process pressure and chamber temperature, improving process control and energy efficiency. AIXTRON G4 is designed for both small- and large-area processing of samples of various substrates. The system also integrates a wide range of components used for vacuum, gas, heating, and plasma control. This powerful combination of features allows for unparalleled reliability and process control, ensuring a high throughput and repeatability. Overall, AIXTRON G 4 is an excellent choice for a wide range of etching and deposition processes and provides improved process control, uniformity, and throughput in semiconductor and other nanotechnology fabrication operations. It is a powerful and reliable tool for reducing cycle times and improving the etch and deposition processes.
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