Used AIXTRON G4 #9222130 for sale

AIXTRON G4 is a member of the G-Series Reactor family by AIXTRON. It is a low pressure chemical vapour deposition (LPCVD) reactor, especially designed for crystalline and semiconductor materials growth. This computer-controlled reactor features an improved design of its components, with higher performance and more efficient operation. It offers better uniformity, repeatability and reproducibility as compared to other systems while covering a wide range of growth processes. AIXTRON G 4 employs a closed microwave chamber, allowing for the deposition of metallic and non-metallic derivates on different wafer materials. It is equipped with two ECR (electron cyclotron resonance) plasma sources, offering an adjustable power level and a wide spectrum of pressure levels. The microwave equipment is controlled independently, allowing for small, but precise, changes on the gases' flow rate. An AIXTRON CleanScan II video system is also included, allowing for a real-time in situ monitoring. The reactor supports a single wafer and a loadlock exchange unit. This machine is designed to give uniformity and repeatability of processes for single- and double-sided wafers. The loading mechanism for the wafers is also automatically controlled and adjusted, ensuring a safe and reliable environment for deposition. G4 is also highly efficient with the adjustment of the necessary parameters such as temperature and pressure. It is able to offer precise control to attain higher perform and uniformity with precise interlayer formation. Its chamber also comes with a stainless steel bellows, designed to improve the chamber's uniformity with its low mechanical stress, preventing overheating. The tool also ensures uniformity on the possibility of a repeatable pattern on a single wafer. G 4 is an ideal tool for processing of a wide variety of materials on the semiconductor and microelectronics industry. With its precise and precise operation, it is ideal for optimizing semiconductor devices, such as silicon thin films, silicon-on-insulator devices and strained silicon.