Used AIXTRON G5 HT #193899 for sale

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Manufacturer
AIXTRON
Model
G5 HT
ID: 193899
Wafer Size: 2", 4", 6", 8"
Vintage: 2010
MOCVD / GaN furnace, 2", 4", 6", 8" Susceptor: 14x4" EPI application: GaN for blue LED Currently in a cleanroom 2010 vintage.
AIXTRON G5 HT is a revolutionary, high-performance Metal-Organic Chemical Vapor Deposition (MOCVD) reactor used for the growth of III-V, II-VI, and compound semiconductor materials. Developed and manufactured by AIXTRON, AIXTRON G5HT is ideal for growing GaAs, InGaAs, InP, GaN, AlGaN, and related materials used in opto-electronic devices, such as lasers, LEDs and laser diodes, as well as compound semiconductor transistors. G5 HT is a horizontal reactor design, providing a large chamber volume with 50 mm and 75 mm substrates. Maximum substrate sizes of 615mm and 1000mm can be accommodated. For higher crystal quality, G5HT features a unique patented homogeneous and very low intrinsic transport of source material via an improved gas flow design, increasing material deposition uniformity across the entire substrate. The housing of the reactor is made of high grade stainless steel, providing optimal uniform heating for improved crystal quality. AIXTRON G5 HT is a reliable source of advanced semiconductor materials, providing crystallinity, uniformity, surface morphology, and device performance. It includes multiple sources, such as heated cluster cartridges, unlimited sources, bubblers, liquid injection sources, and radio-frequency sources, allowing for high and low temperature processes. AIXTRON G5HT is also capable of carrying out advanced oxidation processes and dual-particle beam impingement. Furthermore, G5 HT is equipped with a wide range of hardware and software tools for complete thermal, optical, and process control for even further versatility. These include laser interferometers, reflection high-energy electron diffraction pattern monitoring, mass spectrometers, pressure sensors, oxygen sensors, as well as AIXTRON proprietary AIMS™ software. All of these features combine to create a powerful, reliable MOCVD reactor that is capable of producing high-performance, high-yield material for a range of opto-electronic and compound semiconductor devices.
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