Used AIXTRON / GENUS Stratagem 200 #293766751 for sale
URL successfully copied!
Tap to zoom
ID: 293766751
Wafer Size: 4"-8"
Atomic Layer Deposition system (ALD), 4"-8"
Process thickness: 2mm-10mm
Substrate limitations: Si and Ge
(2) Process chambers:
High dielectric constant dielectric layer film deposition (HfO2, Al2O3)
Metal film deposition (TiN).
AIXTRON / GENUS Stratagem 200 is a chemical vapor deposition (CVD) reactor designed for the epitaxial growth of advanced semiconductor materials used in the manufacturing of electronic devices such as integrated circuits and optoelectronic components. This reactor is highly regarded in the industry for its exceptional performance, precision, and reliability in producing high-quality thin films with superior properties. At the heart of GENUS Stratagem 200 reactor is its advanced process control system, which allows for precise control of key parameters such as temperature, pressure, gas flow rates, and substrate rotation speed. This level of control is critical for achieving uniform and reproducible film growth, particularly in the fabrication of complex multilayer structures with tight tolerances. The reactor chamber of AIXTRON Stratagem 200 is made of high-quality materials that can withstand high temperatures and corrosive environments. The chamber is designed to provide a highly controlled environment for the deposition process, ensuring efficient gas mixing, uniform heat distribution, and minimal contamination of the substrate surface. The reactor is equipped with multiple gas inlets that allow for the introduction of a wide range of precursor gases and dopants necessary for the growth of various semiconductor materials, including III-V compounds, II-VI compounds, and silicon-based materials. The precise delivery of these gases is essential for achieving the desired film properties and crystal quality. One of the key features of Stratagem 200 reactor is its advanced heating system, which provides rapid and uniform heating of the substrate to the desired growth temperature. This helps to minimize thermal stress on the substrate and promotes the formation of high-quality epitaxial layers with excellent structural integrity. The reactor also includes a sophisticated wafer handling system that enables the automated loading and unloading of substrates, minimizing operator intervention and ensuring consistent processing conditions for each growth run. This feature is essential for high-throughput production environments where efficiency and repeatability are paramount. In addition to its advanced process control and automation capabilities, AIXTRON / GENUS Stratagem 200 reactor is equipped with in-situ monitoring and diagnostic tools that allow operators to monitor key process parameters in real-time and make immediate adjustments as needed. This real-time feedback loop ensures optimal film growth conditions and helps to prevent the formation of defects that can compromise device performance. Overall, GENUS Stratagem 200 reactor is a versatile and reliable tool for the epitaxial growth of semiconductor materials, offering industry-leading performance, precision, and productivity for the fabrication of advanced electronic and optoelectronic devices. Its advanced features and capabilities make it a preferred choice for leading research institutions and semiconductor manufacturers seeking to push the boundaries of materials science and device technology.
There are no reviews yet