Used AIXTRON LYNX-III #9083531 for sale

AIXTRON LYNX-III is an advanced plasma-enhanced, chemical vapor deposition (PECVD) equipment used for the deposition of semiconductor films on wafers and other substrates. It is a three-chamber, production-level system that is used for growing at elevated temperatures as well as in-situ doping through charged gas addition. The reactor features a rotating wafer stage for uniformity, and its hexagonal design allows for high temperatures in a confined area. With its nitrogen purge unit, it offers excellent deposition uniformity, with enhanced GaN deposition quality across the target temperature range (750 - 850°C). Vacuum pumps, an RCF, as well as an onboard plasma generator provide efficient vacuum levels for perfect film quality. The process gas feed machine controls the concentration composition and allows a simultaneous mixing process. An advanced gas mixing tool provides unmatched control and reproducibility of several variables such as carrier gas flow, reagent gas flow, and reaction temperature. The integrated gas analyzer is also equipped to monitor different process parameters of the deposition procedure. The reactor also features an automated wafer handling asset, including substrate cooling and heating. LYNX-III has a compact design for easy installation and maintenance. It utilizes distillation-based vacuum technology and includes several safety features to ensure personnel protection against electric shock, gas leakage, and accidental burning. Low ramp time of <60 seconds ensures homogeneity across the wafer, and the model is capable of supporting any cavity design. Multiple Fourier Transform (FTIR) and quadrupole mass spectrometers can be installed to achieve high-quality results. AIXTRON LYNX-III is an advanced and reliable equipment that enables a highly reproducible and controllable deposition process. It is ideal for research and development laboratories, as well as manufacturing facilities, and offers reliable and cost-effective thin-film deposition competence.