Used AIXTRON Tricent #9190702 for sale
It looks like this item has already been sold. Check similar products below or contact us and our experienced team will find it for you.
Sold
ID: 9190702
Wafer Size: 12"
Vintage: 2008
Atomic layer deposition system, 12"
Frame:
Tricent ALD Process cluster oxide
Gas mixing system
Precurson liquid delivery system
ALD Reactor
Vacuum and cooling systems
(2) Tricent ALD Heat exchangers: 220°C
Automatic wafer transfer system
Tricent ALD double O-ring pump
Options:
Tricent ALD Ozone generator for 2 PMs
Tricent ALD set of precursor tanks for vaporizer for 2 PM's
Automatic wafer transfer system:
Fully automated cassette-to-cassette wafer loading and unloading
Configurations: 25 x 300 mm
(3) FOUP loading ports
Loadlock A: Batch 25 x 300 mm
Loadlock B: Batch 25 x 300 mm
Vacuum handling platform: 4 MESC-type process modules
Wafer handling platform includes:
Front end atmospheric module
Front end atmospheric robot
Vacuum transport chamber and frame
MagnaTran magnetically driven
Fully encapsulated vacuum robot
Transfer arm with high temperature end effector
Wafer alignment module
Tricent ALD O-Ring pump:
PM1/PM2 Tricent ALD Process cluster oxide: (2) Deposition modules
Each PM:
Gas mixing system
Ventilated gas mixing cabinet
Electro-polished 316 SUS tubing
VCR-Connectors all orbital welded
Individual control valves:
Pressure indicator switch
Check valves
Particle filters
Pneumatic valves
Gas line:
Reactive gas line: 03 including Destruct
Purge gas line: Ar
High-Flow / Low-Flow purge configuration
Electronic flow controllers and pneumatic valves for various purge lines
Individual pneumatic valves for reactive gas line
Individual downstream pressure controls with electronic mass flow meters for:
(3) reactive gas line and various purge lines
ALD valve block with high-speed switching
ALD valves for reactive gas and various purge lines
ALD valve block temperature-controlled and adapted to reactor lid
Safety configuration: Normally closed
Precursor liquid delivery system:
(2) Liquid precursor lines
Electronic mass flow controller
Pressure controller
Pneumatic valve for solvent line
Liquid flow meters
3-position liquid medium valves for each precursor line
Individual manual separation valves
Electronic mass flow controller
Pressure controller
Pneumatic valve for solvent line
Optional: precursor and solvent tanks
(1) Mist preparator wand, 1.8 liter nominal volume
Single-Injector Tri-Jet liquid precursor evaporation systems:
(2) Contact-less cylinder evaporators
Individually controlled temperature range: 40 C - 250 C
High precision injectors for the liquid precursor lines
Joint Pre-heated carrier gas line
Temperature controlled: 40 C - 230 C
Spare provision: He purge line
Joint run-vent-purge stack
Temperature controlled: 40°C - 230°C
Separate precursor box with room temperature bubbler
Ventilated enclosure with Nitrogen purge line
Smoke detector and ventilation flow sensor integrated in Precursor Box
Single room temperature bubbler for high vapor pressure precursors with TMA
Control valve with pressure indicator switch
Particle filter
Downstream pressure control with electronic mass flow meter
Dual 2/2 way valve for carrier line
Single joint run line with ALD valve
ALD reactor:
Reactor cabinet
Hot wall aluminum reactor chamber, max 220°C.
Showerhead with separation between reactive gas and metal-organic precursor flows
Reactor walls, reactor lid, and showerhead assembly temperature controlled by heat exchanger with thermal liquid
Thermal liquid
Aluminum nitride substrate heater
Closed-loop temperature controlled resistive heater
Wafer transfer lift pin mechanism with vertically movable substrate heater assembly.
Wafer transfer MESC port with pneumatic slit valves
Vacuum system:
Pressure sensors and pressure controllers
Designed for process pressure: up to 10 mbar
Heated exhaust line up to outlet flange on the process module
Throttle valve and check valves
Cooling system:
Type: Julabo
Digital flow meters, temperature transmitters, and manual separator valves for each cooling branch.
Tricent ALD Heat exchanger
One per module required for system operation
For operation with thermal liquid (Thermal H 250)
Maximum operating temperature 220°C.
2008 vintage.
AIXTRON Tricent is a high-performance inductively-coupled plasma (ICP) reactor designed for deposition of a variety of materials such as III-V, compound semiconductor, dielectric, and metal layers on substrates of any size. It is a low-pressure, direct-current (DC) powered gas-flow source, operated at 8-20 mbar with a pulsed-direct frequency of 15kHz and a power transfer capability of up to 600 W. The electric field and uniform heat distribution inside the reactor chamber are generated by the electron-cyclotron resonance technique. Tricent has a fully-enclosed reaction chamber, which provides an optimized space for efficient and uniform deposition of the desired layers on the substrates. Its dual-frequency RF-generator and magnetic-field-generator are capable of operating in a wide frequency range and simulate precise process conditions. The system is equipped with a vacuum-sealable cover, a hot gas valve, and a flexible electrical connection, while the substrate holder is designed to support and hold substrates of different sizes and shapes. AIXTRON Tricent is highly efficient in layer deposition processes, as it is capable of achieving a high deposition rates and overall film uniformity. Its temperature-controlled substrate holder ensures uniform distribution of the energy inside the chamber to guarantee excellent process uniformity across the entire substrate. The internal design of Tricent also includes features such as fast gas switching, simplified maintenance routines, and enhanced cleaning and cooling capabilities, which provide high reproducibility and long-term stability in etching and deposition processes. Moreover, AIXTRON Tricent is designed for easy integration into existing production lines by offering a cost-effective solution to automation and monitoring requirements. It is fully compatible with AIXTRON particle detection and gas measuring systems. This advanced reactor provides reliable and easy-to-use functionalities to generate advanced materials, feature size reductions, and improved process uniformity.
There are no reviews yet