Used AIXTRON TS CCSH30*2" #9167080 for sale

AIXTRON TS CCSH30*2 is a horizontal single-wafer semiconductor reactor with a ceramic-coated graphite susceptor. It is designed to process up to eight wafers at a time, enabling the efficient production of compound semiconductor-based optoelectronic thin-film devices and other optoelectronic devices that require complex lattice structures and doping. The reactor combines an advanced AIXTRON RF-inductively coupled plasma (ICP) source with advanced design features to provide superior throughput and precision control of deposition processes. AIXTRON TS CCSH30*2 reactor features CVD technology that is capable of depositing layers and producing structures as thin as 10 nanometers in thickness. The deposition uses a three-process, direct current-inductive coupled plasma (DCIP) process that gives the reactor the ability to accurately deliver the required CVD-producing gases and oxygen into the reaction chamber. The ICP source features a high-power generator, which is capable of delivering up to 550 W of power to the reaction chamber. The deposition process uses a combination of a susceptor and up to eight wafers at a time. The susceptor is held up to a horizontal platform, which has an adjustable height and width. This allows for precise control of the height and spacing between wafers, helping to ensure deposition processes with uniform film thickness over all the wafers. The reaction chamber design also promotes homogeneous processing, which uses a highly-efficient gas feedback control to ensure deposition processes are extremely precise and repeatable. The chamber is designed with built-in humidity and temperature control as well as a vacuum isolation system. This helps to ensure uniform deposition over the entire surface of the wafer. AIXTRON TS CCSH30*2 reactor is designed to process a wide variety of substrates, including Si, GaN, and GaAs, and can be configured to operate in either a single- or multi-process chamber environment. Its easy-to-use interface provides a host of settings that can be adjusted to ensure optimal substrate and oxide deposition. AIXTRON TS CCSH30*2 reactor is the perfect tool for the production of complex optoelectronic thin-film devices. It features an innovative design that allows for high throughput, precise control of deposition processes, and uniform film thicknesses. It is the ideal choice for process engineers looking for a tool to effectively and efficiently create thin-film devices with the highest quality standards.