Used AIXTRON TS CCSH31x2" #9386612 for sale

AIXTRON TS CCSH31x2 is a high-temperature, chemically vapor deposited (CVD) reactor designed for high-yield growth of thin films. Powered by AIXTRON patented concentric split chamber (CSC) technology, the reactor offers a novel and robust approach to CVD processes for a variety of industries. The TS CCSH31x2 is a horizontally configured, single-wafer, atmospheric-pressure reactor chamber capable of producing films with excellent uniformity, high deposition rates and superior granularity control. The CSC design enables precise modulation of the precursor concentrations and enables the formation of higher-quality films compared to more traditional approaches. The reactor's chamber consists of a top and bottom split chamber separated by a baffle assembly. The top chamber holds the zinc-selenide-based material to be processed, while the bottom chamber houses the heated silicon-carbide-based heater block. The baffle assembly maintains the desired temperature and helps keep process precursors in the lower chamber, ensuring higher-quality growth. The TS CCSH31x2 is equipped with advanced CSC features, enabling users to precisely control the flow rate and temperature of process precursors. A secondary gas delivery system helps reduce the amount of active gas, improving energy efficiency while maintaining the desired process parameters. Additionally, the CSC system offers cool-down times of up to 60 minutes, enabling shorter run times with less wear and tear on the equipment. AIXTRON TS CCSH31x2's unique design offers a reliable and cost-effective solution for CVD thin-film deposition, allowing users to produce superior thin films for a variety of industries. Equipped with sophisticated CSC features, the reactor can maintain desired temperatures and flow rates over extended periods of time. In addition, other features such as the secondary gas delivery system and cool-down times of up to 60 minutes further optimize the process and ensure higher-quality results.