Used AIXTRON TS CCSH31x2" #9386931 for sale

AIXTRON TS CCSH31x2"
Manufacturer
AIXTRON
Model
TS CCSH31x2"
ID: 9386931
Vintage: 2008
MOCVD Systems Upgraded to 37x2" 2008 vintage.
AIXTRON TS CCSH31x2 reactor is a multichamber plasma deposition system designed for Functional Metal Oxide (FMO) and dielectric oxide based materials deposition. It utilizes an advanced remote plasma source for the growth of high quality and precise film thicknesses. In addition, the system is capable of operating with both batch-wise and inline processes. AIXTRON TS CCSH31x2 has an integrated single zone electron cyclotron resonance (ECR) plasma source. This ECR plasma source can be used to optimize the deposition by allowing for low energy deposition with a precise control of the energy and flux of particles on the substrate area. The ECR source is further comprised of a microwave generator and an external magnetic field coils, which ensure a homogenous and uniform plasma. AIXTRON TS CCSH31x2 reactor utilizes a helicon coil for accelerating and sustaining the plasma. The reactor also allows for fast, precise, and repeatable layer deposition by means of substrate rotation and pedestal motion. Furthermore, the turret design of AIXTRON TS CCSH31x2 allows for up to four substrate loading rows and two depostion chambers. This allows for large surface treatments of various substrates and frequent substrate changing. AIXTRON TS CCSH31x2 reactor has advanced process control and monitoring capabilities. It is equipped with feedback systems to ensure the best process reproducibility and precision. It is configured to provide feedback on substrate temperature, deposition rate, and gas pressure. This serves to provide the accuracy and precision in layer deposition, which is required in industrial process. Also, AIXTRON TS CCSH31x2 reactor has a built-in safety interlock that automatically shuts down the chamber upon injection of an inert gas during the etching process. AIXTRON TS CCSH31x2 reactor is designed to work in a wide range of typcially used process gases such as oxygen, nitrogen, and argon. Moreover, it is suitable for functionalization of surface and deposition of complex metal oxides, such as indium tin oxide (ITO) or zinc oxide (ZnO). Overall, AIXTRON TS CCSH31x2 is a multi-chamber plasma deposition system designed for Functional Metal Oxide (FMO) and dielectric oxide based materials deposition. It allows for precise and homogeneous plasma deposition with process control and monitoring capabilities. It is well suited for functionalization of surfaces and deposition of complex metal oxides.
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