Used AIXTRON VP508GFR #9115997 for sale

AIXTRON VP508GFR is a GaN-on-Film reactor from AIXTRON. It is capable of creating defect-free, high-efficiency semipolar and nonpolar GaN layers on a variety of substrates. The reactor utilizes high-frequency electron-cyclotron resonance (ECR) plasma to grow high-quality GaN epitaxial layers on 4-inch, 6-inch, or 8-inch InP, Si, or GaAs substrates. The reactor also has a heated stage capable of reaching temperatures of up to 1000°C and can be used to grow multi-layer structures as well as for recrystallization options. VP508GFR is easy to use, thanks to user-friendly, software-controlled equipment components that facilitate the setting of various process parameters. In addition, the intuitive graphical user interface automates the generation of recipes for all standard process parameters. AIXTRON VP508GFR employs a fully flanged processing chamber that maximizes process capability. A number of innovative features make the reactor one of the most versatile and powerful of its kind on the market. These include two integrated effusion cells that enable the use of different noble gases for different steps of the epitaxy, a high-frequency electric field that accelerates the rate of deposition, and an automated gas flow system that ensures precise control and uniformity of the process gas. VP508GFR is equipped with a number of gas delivery and safety subsystems to ensure accurate and consistent operation. Gas delivery is managed by a closed-loop mass flow controller, while safety includes both cooling and pressure monitoring systems that can shut down the unit in case of a problem. The reactor is capable of creating defect-free multilayer GaN films with excellent crystallinity and optical properties, as well as low impurity levels. It can be used to create high-efficiency, non-polar and semipolar LEDs. AIXTRON VP508GFR is an ideal machine for research and product development due to its high flexibility and efficiency.