Used AIXTRON VP508GFR #9401520 for sale

AIXTRON VP 508GFR is a vertical close-coupled cold-wall epitaxy reactor based on magnetron sputtering. It is designed to efficiently produce III-V optoelectronic materials and is capable of generating both 2D and 3D device structures. VP 508GFR reactor is equipped with a medium-sized turbo-molecular pump and a 200mm main chamber. The main chamber has a maximal operating pressure of 1 to 10E-1mbar, while the substrate temperature can be adjusted between 25°C and 500°C. The floor of the reactor is fitted with an inductive RF generator, allowing for the heating of the substrates using a planar induction source. This structure allows for uniform heating and deposition of epitaxial layers. AIXTRON VP 508GFR utilises a range of metals for its sputtering source, with the option for inductively coupled plasma (ICP) and glow-discharge optical emission spectroscopy (GDOES) sources to refine deposition parameters. It also offers a gas-injection system for accurately controlling growth parameters, such as doping level and density. VP 508GFR is designed with an integrated software system that offers easy access to reactor conditions. It also provides a working environment with different multi-tasking capabilities, such as automated recipes and setups, a number of user-defined parameters, and remote control access to your experiments. Applications of AIXTRON VP 508GFR include optoelectronic materials, epitaxial materials and layer structures, such as vertical cavity surface-emitting lasers (VCSELs), PIN-type photodiodes, quantum cascade laser (QCL) structures, and VECSELs. It is an ideal choice for those who require precise and consistent deposition parameters for their optoelectronic applications.