Used AMAT / APPLIED MATERIALS 0010-03254 #293763796 for sale

AMAT / APPLIED MATERIALS 0010-03254 Reactor is an advanced ion implantation equipment designed for use in semiconductor fabrication processes and related microfabrication applications. The system consists of a high-vacuum chamber with a precision ion-source assembly and an ion beam collimator for controlling ion beam direction and spot size. The ion beam is accelerated with a RF power supply and then focused onto a sample stage. The chamber can be evacuated and activated with the intracavity turbo pumps and gate valve. AMAT 0010-03254 Reactor contains ion-source technology that enables a wide range of process parameters to be precisely controlled. The active high-energy elements in the source provide improved reliability, process stability and fast start up, while also making it ideal for both low-temperature and high-energy processes. A stable electrical discharge ionizes the source species and uses a bipolar RF source to control the ion energy. The source heating elements accurately atomize and dissociate the source species, and the gas valve can be used to control the flow rate, pressure and composition of the source species. The energy spread of ions is controlled by two independent grids. APPLIED MATERIALS 0010-03254 Reactor contains a beam diagnostic unit, comprising angular- and time-of-flight scans and extractable beam current measurements for characterizing the ion beam. An optional computer-controlled sample stage can be used for workpiece positioning, enabling scanned implant and X, Y plane sample movement for precise dose control. The machine also contains an independent end pump for fast evacuation. The magnetronic multipole is used for beam focusing and can be adjusted for high-emaille angles and low-energy angles. 0010-03254 Reactor is capable of operating in multiple modes, including single wafer and batch modes, and can be used to implant any species of ion. The tool provides up to two milli-amps of current, adjustable bias voltage and an active source temperature range of 0- 980°C. The asset can accommodate any sample size/shape, including multiple wafers, and the pressure can range between 10-3 to 10-7 torr. The maximum beam energy is 50 to 500 keV and features advanced process monitoring and machine operation features. AMAT / APPLIED MATERIALS 0010-03254 Reactor is a highly efficient and advanced model that performs a wide range of critical semiconductor fabrication processes.