Used AMAT / APPLIED MATERIALS 0010-09750 #119691 for sale

AMAT / APPLIED MATERIALS 0010-09750 is a versatile, high-performance physical vapor deposition (PVD) reactor designed for advanced, low temperature processes. AMAT 0010-09750 is a single-wafer HiPIMS (High Power Impulse Magnetron Sputter) tool, with a flexible platform ideal for multi-layer deposition sequences. The equipment utilizes a proprietary cluster source geometry and real time 0-15KW power control to achieve high rates and uniform layer thickness (UTL). The system features a Multi-Facing Magnetron Cluster source with up to five independent process zones, allowing for different operations such as single target deposition and dual target e-beam melting. This allows for a variety of different plasma sputtering techniques, making it suitable for a wide range of applications such as advanced dielectrics and ultra-high performance coatings. The 13-inch top-loading chamber can accommodate up to six 6-inch wafers in one run, and is compatible with solar, MEMS, and LED products. APPLIED MATERIALS 0010-09750's advanced temperature control unit allows for precise regulation of substrate temperature and process parameters. Two different pumps (turbo pump and dual-stage dry pump) are used for process chamber evacuation and efficient base pressure control. The machine operates at temperatures between -90°C and +150°C to allow for various process cycle times, with multi-zone heater configurations to precisely manage substrate temperatures. The tool has an integrated read/write function to create, execute and modify recipe operations. Specialized recipes can be easily stored and retrieved allowing for maximum flexibility. The user interface host computer gives the operator full control of the asset, making it easy to monitor and adjust process parameters. Active in-situ corrosion analysis software is available as part of the model providing rapid on-the-fly analysis. The equipment is an excellent choice for customers who require fast deposition rate, precise control of process parameters and multi-layer deposition sequences.