Used AMAT / APPLIED MATERIALS 0010-09750 #293618116 for sale

ID: 293618116
RF Match for P5000 Process: CVD.
AMAT / APPLIED MATERIALS 0010-09750 is a single-wafer, thermally-processed chemical vapor deposition reactor. AMAT 0010-09750 is a tool used for the deposition of thin films onto semiconductor wafers and substrates. The reaction chamber of this equipment is cylindrical in shape, and it allows for uniform deposition of the film on the substrate. The process is carried out in a hot hydrogen atmosphere at temperatures ranging from 200-400 degrees Celsius. The reaction chamber of APPLIED MATERIALS 0010-09750 is equipped with gas and process control units. These units provide a precisely controlled environment, allowing for accurate flow and distribution of all reactant gases. This boosts reaction speed, resulting in higher yields and improved product quality. A two-stage heating process is also used in the system which ensures uniform heating of the substrate and reactant gases, creating a homogenous film on the substrate. The film growth rate and surface smoothness can be adjusted with a throttle valve located at the outlet of the reaction chamber. The reflectance of the film can also be accurately controlled with a shutter located in the reaction chamber. The shutter helps to produce a high-quality film with a wide range of refractive indices. 0010-09750 is equipped with a computer-integrated monitoring unit. This machine accurately records deposition rate, temperature and pressure in the reaction chamber and allows for better process control. The tool also includes hardware interlocks and vapor-injection control for added safety and improved production efficiency. AMAT / APPLIED MATERIALS 0010-09750 reactor has been used for many applications, including the deposition of silicon oxide and silicon nitride memory chips, passivation layers for LED chips, and nitride and oxide films for transistor interconnects. The asset is an effective, reliable and reliable tool for producing high-quality thin-film materials.
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