Used AMAT / APPLIED MATERIALS 0010-36162R #9075360 for sale

AMAT / APPLIED MATERIALS 0010-36162R is a type of reactor used in advanced semiconductor fabrication. It is a Versalinx etch reactor, which is a dry vapor etch system unique to AMAT. The system is designed for use in both aluminum and silicon etching for both front-end and back-end IC and MEMS applications. This specific model of the Versalinx is equipped with an electrical bias, and can accommodate a range of etch chemistries, making it very versatile. AMAT 0010-36162R can etch features between 20 nanometers and 1 micron into both aluminum and silicon with excellent depth control. The subsystem delivers high materials removal rates, precision etch results, and excellent surface quality due to its reliable subsystem process control capability. It is capable of single or multi-layer etching, enabling device feature sizes of less than 20 nanometers. The etch process setup is easy to configure. The Versalinx components are servomotor-driven and thus highly precise. The pressure and temperature are adjustable, as is the bias voltage and power. Additionally, the maximum power can be adjusted and the electrical field directed, helping to match etch rates from different samples. The ability to customize the setup for a variety of etch chemistries makes this an ideal choice for deep silicon etching processes, as well as critical 1x and 2x wafer etching. The Versalinx etch reactor is perfect for processing chips with precise symmetric patterns. Its high etch rate and excellent depth control also make it ideal for tungsten etching as well as other critical post-deposition processes. It is also capable of handling a range of materials, such as metals like aluminum and titanium. The system employs a load lock for uniform evacuation of the chamber and has an edge-bead rail controller for sample location. Together, the features contribute to high overall throughput and excellent control of the etch process. In conclusion, APPLIED MATERIALS 0010-36162R is a top-of-the-line etch reactor that is well-suited to a wide variety of etch applications. It has excellent materials removal and depth control capabilities, and is highly customizable for different etch chemistries. It can etch features down to sizes below 20 nanometers, enabling deep silicon etching as well as tungsten etching for post-deposition processes. With its robust design, reliable subsystem process control, and excellent throughput, it is an ideal choice for advanced semiconductor fabrication.