Used AMAT / APPLIED MATERIALS 0010-85027 #293650214 for sale

ID: 293650214
Wafer Size: 12"
Ceramic heaters, 12" P/N: 0042-23217.
AMAT / APPLIED MATERIALS 0010-85027 is a highly-advanced reactor which is designed for multiple processes in separate chambers within its single platform. It is typically used in semiconductor manufacturing and related industries. This reactor is composed of two sectors: one containing the plasma source, along with gas and liquid inlets and outlets; and another sector incorporating the process chamber. The plasma source is a high-frequency generator which creates a low-temperature, low-pressure plasma. This is then passed through the process chamber where a wide array of deposition, sputter and etching operations can be performed. The Advanced Conformal Deposition processes form and deposit ultra-thin, conformal layers onto a wide range of unpatterned substrates with excellent uniformity, making it an ideal tool for sub-100 nanometer device formation. Advanced etching techniques include high-density plasma etching and ion-beam etching to achieve high-accuracy etching of multiple layers with minimized defects. Moreover, high-performance sputter technologies, with adjustable sputter rates, can be employed to deposit final layers and deposit high-reflectance layers for passivation and optical features. In addition to this, AMAT 0010-85027 has a variety of features that allow for precise process control. These include a force-balanced internal coil system which precisely targets the plasma source, as well as real-time monitoring systems and advanced computer-controlled automation. Its advanced process control also ensures conformity, repeatability and uniformity. This reactor is highly adaptable and can be customized to meet the specific needs of the user. It is also fully compliant with ISO 13485 and 21 CFR Part 11 standards, making it suitable for use in a variety of industries including biotechnology and medical devices. Furthermore, it is both reliable and efficient, offering a cost-effective solution for semiconductor fabrication.
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