Used AMAT / APPLIED MATERIALS 0200-06824 #293668873 for sale

ID: 293668873
Wafer Size: 12"
Cover ring for Ultima X, 12" Process: HDPCVD.
AMAT / APPLIED MATERIALS 0200-06824 is an advanced plasma etching reactor for semiconductor fabrication. The equipment provides a solution for critical feature definition in both shallow trench isolation (STI) and shallow trench deeper silicon etch. The reactor's process chamber is an all-metal design with multiple electrodes which allows it to adjust its selective etch rates in order to provide superior results. Its advanced plasma source delivers excellent electrical control for repeatable process performance. The system is designed as a small, sealed unit, which results in reduced noise levels and improved unit cleanliness. The advanced power and control electronics of AMAT 0200-06824 deliver high-performance precision. This is shown through the pressure control machine's capabilities, which allow it to maintain excellent process repeatability and minimize ion bombardment of the chamber walls during operation. The advanced RF generator of the reactor also allows for tailored etch profile shape control. The end user will enjoy an intuitive and easy to use GUI (Graphical User Interface), which makes recipe creation and set-up a breeze. With a wide range of process recipes available, users of the reactor are able to optimize their process parameters for the product they are trying to achieve. The tool also supports repeatable runs and is equipped with a health monitor so that users can check the condition of the asset. APPLIED MATERIALS 0200-06824 is an intuitive and efficient model for the production of high-quality semiconductor materials. With its advanced plasma control systems and wide range of process recipes, the reactor allows users to precisely control etch profiles for superior performance. Its graphical user interface makes set-up and recipe creation a simple task, while its health monitoring equipment ensures operators have the best information to make sound decisions.
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