Used AMAT / APPLIED MATERIALS 7800 #9181899 for sale

AMAT / APPLIED MATERIALS 7800
ID: 9181899
Wafer Size: 6"
Epitaxial (EPI) reactor, 6".
AMAT / APPLIED MATERIALS 7800 is a leading-edge, high performance tool for the fabrication of ultrathin and ultra-wide integrated circuits. It is a chemical vapor deposition (CVD) PECVD reactor designed to deposit ultra-thin films with excellent uniformity at temperatures between 300°C and 550°C. The reactor is equipped with two differential pumping stages to provide superior deposition uniformity across the entire wafer. Its automated control system is intuitive and easy to use, allowing for fast process ramp-up and low process optimization time. AMAT 7800 is capable of depositing thin films with exceptional uniformity, including ultra-thin gate oxides, high temperature barrier materials, high dielectric constant dielectrics, metal contacts and metal interconnects. Ultrathin gate oxides are especially important in transistors, High-k dielectrics are essential for scaling further down to finer nodes, and METAL contacts and Interconnects are needed for metallization of interconnects. APPLIED MATERIALS 7800 is capable of depositing a wide variety of materials including but not limited to silicon dioxide, hafnium oxide, tantalum oxide, boron nitride, titanium nitride, hafnium nitride, and other dielectric materials. 7800 is ideal for high-volume production of ultra-thin and ultra-wide devices and circuits. It is thermally stable and capable of producing high-quality, consistent deposits on large wafers. With its high-performance PECVD chambers, it allows precise temperature control of the deposition process, allowing for precise film thickness and uniform deposition. The intuitive and easy-to-use interface makes it easy to adjust the deposition process for different materials on different wafer sizes. The automated control system allows for fast process ramp-up and low process optimization time. Overall, AMAT / APPLIED MATERIALS 7800 is an advanced CVD PECVD reactor that is well suited to high-volume production of ultra-thin and ultra-wide devices and circuits. It is capable of excellent deposition uniformity and precise temperature control of the deposition process, allowing the highest quality and output levels in microfabrication.
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