Used AMAT / APPLIED MATERIALS AMC 7811 #9315232 for sale

AMAT / APPLIED MATERIALS AMC 7811 Reactor is a single wafer, high-density plasma reactor from AMAT for producing dielectric layers, thin film dielectrics, metal layers and other advanced technology layers. The silicon oxy-nitride (SiON) deposition process is the primary use of this reactor. This reactor is especially suited for the advanced semiconductor industry due to its tight process control, low gas-flow sensitivity, and excellent uniformity, with parameters such as film thickness, etch rate, deposition rate, and uniformity. AMAT AMC 7811 is a reaction chamber with a plasma source, and pressure controlling equipment, and an in-situ DC bias for precise control over the deposition process. It features a temperature range between 25 and 350°C and a pressure range of 0.01 to 200 torr. The maximum substrate size --or wafer size-- is 380mm. The average deposition rate for the system is 2.5 to 5 nanometers per minute, with an etch rate of up to 5 nanometers per minute. APPLIED MATERIALS AMC-7811 uses RF Plasma, rather than traditional CVD method, to deposit oxide layers. The variety of materials that can be deposited using this unit include siloxane-based SiON, silicon dioxide, hafnium oxide, titania, and aluminum oxide. This machine features a strong uniformity across the entire wafer, making it ideal for thin film dielectrics and metal layers. In addition to this, AMAT AMC-7811 utilizes an in-situ clean feature that allows for accurate control of the process parameters. This process is initiated by the 'in situ clean' feature within the software, which heats the wafer to a predefined temperature in a clean environment. This ensures the wafers are cleaned and adequately pre-treated for subsequent processes. AMC-7811 has a built-in computer tool that allows it to automatically adjust process parameters based on the type of material being deposited and the substrate. This allows for quick and accurate process setup, and ensures that users have the best possible results. The process data is recorded by the asset for performance analysis and trouble-shooting. APPLIED MATERIALS AMC 7811 is an ideal choice for producing dielectric layers, thin film dielectrics, metal layers and other advanced technology layers. It offers great process control, uniformity, and low gas-flow sensitivity, making it particularly suitable for the semiconductor industry. The use of RF Plasmas and inert gas cleaning ensures a high level of quality and consistency in the deposited layer. The automated functionality of the model ensures efficient process setup. All these features make AMAT / APPLIED MATERIALS AMC-7811 a great choice for a variety of applications.