Used AMAT / APPLIED MATERIALS Centura 200 EPI #9384326 for sale

Name: AMAT / APPLIED MATERIALS Centura 200 EPI
Brand: AMAT / APPLIED MATERIALS
SKU: 9384326
Availability: InStock

URL successfully copied!

Reactors

Manufacturer

AMAT / APPLIED MATERIALS

Model

Centura 200 EPI

ID: 9384326

Vintage: 2021

PECVD System, 8" Chambers: Chamber A: ATM Epi Chamber B: ATM Epi Chamber C: ATM Epi Chamber F: Single slot cooldown STD Transfer Wide body loadlock System voltage: 480V Frequency: 60Hz Transformer capacity: 480V to 208V / 300Amps CB1 Current rating: 300 Amps Leak detectors: Gas panel, H2 Mainframe exhaust: H2 Clean room monitor: TFT Stand alone Maintenance room monitor: TFT Stand alone Gas panels: Gas panel type: Configuable FUJIKIN Gas panel exhaust position: CH-A (Only for configurable type) Platter mixer Platter chamber-A Platter chamber-B Platter chamber-C (2) Mixed dopants (1) Silicon source Fujikin FCST Main H2: 100 slm Slit H2: 30 slm Minimum HCl: 1 slm Maximum HCl: 30 slm TCS: 20 slm Dope (INJ): 300 sccm Dope mixer (SRC): 500 sccm Dope mixer (DIL H2): 20 slm Pressure transducer (gauge) range: 0-45 Cabinet exhaust switch type: AMAT Mainframe: EPICREW Blower and heat exchanger Blower voltage: 480 VAC YASKAWA Variable speed blower Mainframe cabinet exhaust: Channel A side AMAT Lamp fuse tray and fuses AMAT Lamp C/B AMAT Lamp contactor AMAT Lamp harness assembly AMAT Gas lines (From gas panel to floor plate) AMAT Chamber tray AMAT Facilities water supply/Return connections Stainless steel water fittings Remote frame: CB1 Current rating: 300 Amp Umbilical cable length: 25 Feet V452 SBC Board AMAT Video card SSD 1 GB Hard Disk Drive (HDD) Chamber interface board: Chamber A, B and C AMAT SCR Driver AMAT SCR C/B AMAT SCR Contactor with fuses AMAT H/A Breaker to contactor Load lock chambers: Universal platform Wide body Wafer mapping Wafer slide detect Fast backfill Cooldown chamber: Type: Non-contact Center finder : On-the-fly N2 Purge restrictor size: 5 slm Transfer chamber: Transfer chamber lid hoist Robot type: HP AMAT Slit valve N2 Purge restrictor size: 5 slm x 3 Chamber A: Wafer sizes: 8" Standard process: ATM Ushio -B3G Lamps Rotation rev.R3.4 Exhaust line cone baffles (ATM) Reflector cones SWAGELOK Isolation valve Chamber B: Wafer size: 8" Standard process (ATM) USHIO B3G Lamps Rotation rev.R3.4 Reflector cones SWAGELOK Isolation valve Chamber C: Wafer size: 8" Standard process (ATM) USHIO B3G Lamps Rotation rev.R3.4 Reflector cones SWAGELOK Isolation valve Pallets for FUJIKIN: Model / Positions / Process gas / MFC Size FCST / 1 / H2 / 20000 FCST / 3 / H2 / 500 FCST / 5 / HC1-Hi / 30000 FCST / 6 / HC1-Lo / 1000 FCST / 7 / H2 / 100000 FCST / 8 / H2 / 30000 2021 vintage.

Read More Close

AMAT / APPLIED MATERIALS Centura 200 EPI (Epitaxial Process Integration) Equipment is a wafer-level, vacuum-based processing reactor for providing epitaxial deposition of layers on semiconductor wafers. This wafer fabrication reactor is specifically designed to increase performance, reliability, and throughput for dielectric films, metal films, and compound semiconductor materials (such as gallium arsenide, aluminum gallium arsenide, and indium-based compounds). It is suitable for a wide range of industries, including microelectronics, optoelectronics, telecommunications, and bioelectronics. The system has been designed to overcome the difficulties of maintaining high-growth rates while maintaining a uniform distribution of the deposited material. The process offers support for multiple layers of polysilicon and silicon dioxide and provides capability for the growth of ultra-thin layers and multi-orientation epitaxial operations. It also provides high-temperature thermal processing options, such as annealing and channeling. AMAT Centura 200 EPI uses a radio frequency (RF) excitation source to achieve high-throughput growth rates. The unit utilizes a single-walled cylindrical heating chamber, in which multiple small indirect plasma generators create a uniform electric field along the chamber's direction. The uniform electric field and the high-efficiency RF coupling make APPLIED MATERIALS Centura 200 EPI suitable for both low-temperature and high-temperature processes. The machine is also highly efficient in terms of energy consumption and is capable of achieving low nucleation densities, with high deposition selectivity. Using the attached software control, it is possible to achieve layer uniformity and stability with very low by-product formation. Additionally, Centura 200 EPI can be combined with other deposition systems in a cluster configuration for high-density substrates. The tool is designed with a modular architecture that enables automation options, including robot-based wafer handling. It is cased in a compact and robust case, which makes it suitable for integration into cleanroom workflows. AMAT / APPLIED MATERIALS Centura 200 EPI is powered by a robust vacuum asset and offers full control over wafer temperature and process parameters. Overall, AMAT Centura 200 EPI model offers a highly reliable epitaxial deposition solution that is suitable for a wide range of applications. Its efficient energy consumption and its modular architecture make it the ideal choice for device makers who require reliable and consistent performance.