Used AMAT / APPLIED MATERIALS Centura 4.0 Radiance #9070281 for sale
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ID: 9070281
Wafer Size: 12"
Vintage: 2003
Platform RTP systems, 12"
Single Wafer Processing
Multi-chambers
Position A, B, C: 12" RTP (RPO/RTO)
RTN Capability
Software Legacy B4.60_30
Computer NT 4.0
Kawasaki Robot FI
Aligner
Single Blade MF Robot
WRLD Controller
Mainframe N2 gas flow MFC
Chambers:
Chamber type: Radiance RTP
Gas config. (sccm)=MFC full scale
N2 Frame(20000)/NH3(30000)
N2O(30000)/He(5000)/N2 Low(500)
O2 Low(10000)/O2(50000)/N2(50000)
N2 BOT(50000)/He BOT(50000)/N2 MAG(100000)
Chambers A, B, D:
Gas stick 1 - N2-Frame, 20slm
Gas stick 2 - NH3, 30slm
Gas stick 3 - N2O, 30slm
Gas stick 4- none
Gas stick 5 - HE, 5slm
Gas stick 6 - N2Low, 500cc
Gas stick 7 - O2 Low, 10slm
Gas stick 8 - O2, 50slm
Gas stick 9 - N2, 50slm
Gas stick 10 -N2BOT, 50slm
Gas stick 11 - HEBOT, 50slm
Gas stick 12 - N2-MAG, 100slm
Missing parts:
Buffer Blade, 0200-02527
Ch-D (HDA), 0190-38992
Currently in storage
2003 vintage.
AMAT Centura 4.0 Radiance is an advanced single-wafer thermal chemical vapor deposition (CVD) reactor. It is designed for the production of oxide, nitride, and metal films with superior uniformity, critical dimension uniformity, and adhesion. The Centura 4.0 Radiance is an ideal choice for advanced semiconductor device fabrication. The reactor features a horizontal, CVD-ready chuck with a loadlock and wafer mapping chamber. This enables efficient loading and unloading of substrates, as well as precise equipment control. The loadlock and wafer mapping chamber provide users with additional process control and safety, while a single-wafer horizontal orientation increases uniformity and lowers contamination. The chamber is constructed from an All-Ceramic design, which is flame-retardant and requires minimal epoxy maintenance. The Centura 4.0 Radiance is constructed with a Smartwall process chamber with a gas injector system and plasma exposed Volume Reduction Technology (PVR) to provide a unified CVD process flow for all processes run. This unique unit allows the user to control the chamber conditions from the gas flow to the pressure profile and temperature. The PVR injection machine provides total control of the reactant gases, further ensuring uniformity and consistent results. Additionally, the Centura 4.0 Radiance features an Etch Ready with the CoolFlush RF tool, which provides uniform removal of native oxides and conformal cleaning. The reactor also incorporates a Recipe Edition 4.0 process control software package with user-friendly visual displays and diagnostics. The software includes features like Process Metrics to monitor recipes and stopwatches to track processing times. The software provides complete control and management of the deposition process, from loading and program configuration to recipe execution and data analysis, ensuring product quality. Overall, APPLIED MATERIALS Centura 4.0 Radiance CVD reactor is an efficient, reliable, and cost-effective solution for high-temperature and short-time processing of oxides, nitrides, and metals. It provides superior uniformity in both critical dimension and sheet resistance with excellent adhesion and outstanding step coverage. This makes it an ideal choice for advanced semiconductor device fabrication processes.
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