Used AMAT / APPLIED MATERIALS Centura 5200 MxP #9105942 for sale
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ID: 9105942
Wafer Size: 8"
Dielectric oxide etcher, 8"
(3) Chambers
Install type: Through the wall
Cassette interface:
Narrow body load locks with wafer mapping
HP Robot
On-the-fly wafer center finding
Software version: 4.8_27
Chambers A, B, C, and D: Dielectric etch MXP
ESC
Standard cathode
Bolt-down chamber lid
Seiko seiki STP 301 CB1
Phase IV RF Match
AMAT optical endpoint system S/W version 30
(2) AMAT 1 heat exchangers
(2) Neslab HX-150 chillers with CHX Interface
Gas panel configured as follows:
Chamber A:
N2 100
O2 50
CF4$ 200
CHF3 100
Ar 150
Chamber B:
N2 100
O2 50
CF4$ 200
CHF3 100
Ar 110
Chambers C, D:
N2 100
O2 50
CF4$ 200
CHF3 100
Ar 250.
AMAT / APPLIED MATERIALS Centura 5200 MxP is a semiconductor-grade chemical vapor deposition (CVD) reactor used for advanced film deposition processes. This equipment uses an advanced design to apply advanced thin film deposition processes such as high-k dielectric, metal nitride, and other specialized materials in order to create super-fast transistor networks. AMAT Centura 5200 MxP is the latest in a series of AMAT deposition systems, designed to meet the rigorous demands of the semiconductor manufacturing industry. APPLIED MATERIALS Centura 5200 MxP reactor is composed of five modules, each designed to deliver superior performance and reliability. The system is made up of the power supply, the process chamber, the wafer handling unit, the temperature control systems, and the gas delivery machine. The power supply offers a high degree of accuracy and control over the deposition process, allowing for precise material deposition. The process chamber features a cylindrical stainless steel design with a heater plate and two lift pins for accurate and repeatable thickness uniformity. The cleverly designed process chamber incorporates a unique deposition cycle which will operate in both static and dynamic deposition modes. The wafer handling tool includes an automated 200mm wafer transportation asset and three-axis wafer manipulation. The wafer manipulation model enables highly accurate wafer placement and gas flow control, allowing for repeatable, uniform deposition results. The temperature control systems provide precise uniformity across the wafer during the deposition process, by accurately controlling the substrates heating and cooling rates. The gas delivery equipment supplies the gases required during the deposition process, while the flexible gas selection feature offers the option of using either a single or multiple gases. The system also utilizes a number of advanced safety features, such as fire suppression, leak detection and emergency shut down, to ensure a safe and reliable operation. Overall, Centura 5200 MxP is an advanced CVD reactor designed specifically for advanced film deposition processes. With an advanced design, process chamber, temperature control systems and gas delivery unit, AMAT / APPLIED MATERIALS Centura 5200 MxP provides superior performance and reliability for high quality thin film deposition applications.
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